SI2300DS-T1-GE3 VBsemi Elec

Name: SI2300DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2300DST1GE3_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2300DS-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2300DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2300DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2300DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	20V 6A 28mO@4.5V,5A 2.1W N Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2300DS-T1-GE3 Datasheet (PDF)

Price (USD)

10: USD 0.123 ea
Line Total: USD 1.23

Availability : 135

Ship by Fri. 26 Sep to Thu. 02 Oct

Qty Unit Price
10 $ 0.123
100 $ 0.0978
300 $ 0.0638
3000 $ 0.0491
6000 $ 0.044
9000 $ 0.0415

SI2300DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 135

Ship by Fri. 26 Sep to Thu. 02 Oct

MOQ : 10
Multiples : 10

Qty Unit Price
10 $ 0.123
100 $ 0.0978
300 $ 0.0638
3000 $ 0.0491
6000 $ 0.044
9000 $ 0.0415

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

6 A 6 A

Drain Source On Resistance Rdson@Vgs Id

28 mOhms @4.5V , 5A 28 mOhms @4.5V , 5A

Power Dissipation Pd

2.1 W 2.1 W

Gate Threshold Voltage Vgsth@Id

1 V @250uA 1 V @250uA

Reverse Transfer Capacitance Crss@Vds

55 pF @10V 55 pF @10V

Type

N Channel N Channel

Input Capacitance Ciss@Vds

865 pF @10V 865 pF @10V

Total Gate Charge Qg@Vgs

8.8 nC @4.5V 8.8 nC @4.5V

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the SI2300DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2300DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2300DS-T1-GE3 is a 20V, 6A, 28mO@4.5V, N Channel SOT-23 MOSFET manufactured by VBsemi Elec. The device has a maximum power dissipation of 2.1W and is ROHS compliant. This MOSFET features a low RDS(on) of 28mO@4.5V making it ideal for switching applications where power efficiency matters. It is also suitable for high frequency circuit designs owing to its low capacitance. The device is also provided with a gate-source voltage rating of 20V and a continuous drain current rating of 6A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
10	$ 0.123
100	$ 0.0978
300	$ 0.0638
3000	$ 0.0491
6000	$ 0.044
9000	$ 0.0415

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