SI2308DS-T1-GE3 VBsemi Elec

Name: SI2308DS-T1-GE3
Brand: VBsemi Elec
SKU: SI2308DST1GE3_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2308DS-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2308DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2308DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2308DS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	60V 3.1A 1.66W 85mO@10V,1.9A N Channel SOT-23-3 MOSFETs ROHS
Datasheet:	SI2308DS-T1-GE3 Datasheet (PDF)

Price (USD)

5: USD 0.2228 ea
Line Total: USD 1.11

Availability : 349

Ship by Fri. 15 Aug to Wed. 20 Aug

Qty Unit Price
5 $ 0.2228
50 $ 0.218
150 $ 0.1611
500 $ 0.1429

SI2308DS-T1-GE3 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 349

Ship by Fri. 15 Aug to Wed. 20 Aug

MOQ : 5
Multiples : 5

Qty Unit Price
5 $ 0.2228
50 $ 0.218
150 $ 0.1611
500 $ 0.1429

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

60 V 60 V

Continuous Drain Current Id

3.1 A 3.1 A

Power Dissipation Pd

1.66 W 1.66 W

Drain Source On Resistance Rdson@Vgs Id

85 mOhms @10V , 1.9A 85 mOhms @10V , 1.9A

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

SI2308DS-T1-GE3 Alternative Parts

We are delighted to provide the SI2308DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2308DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2308DS-T1-GE3 is a 60V 3.1A 1.66W 85mO@10V, 1.9A n-channel MOSFET manufactured by VBsemi Elec, a leading semiconductor manufacturer. This SOT-23-3 MOSFET is RoHS compliant and is designed for use in low voltage applications. It has an array of features, including high switching speeds, low on-resistance, and low gate-source capacitance. This MOSFET is suitable for dc-to-dc switching, voltage regulation, and power management applications. It can also be used in automotive, computer, communication, and industrial platforms.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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