SI2319DS-T1-GE3 VBsemi Elec

SI2319DS-T1-GE3 electronic component of VBsemi Elec
SI2319DS-T1-GE3 VBsemi Elec
SI2319DS-T1-GE3 MOSFETs
SI2319DS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2319DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319DS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2319DS-T1-GE3
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: 30V 5.6A 55mO@10V,4.4A 2.5W P Channel SOT-23-3 MOSFETs ROHS
Datasheet: SI2319DS-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.0962 ea
Line Total: USD 0.48 
Availability : 305
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
5$ 0.0962
50$ 0.0942
150$ 0.0928
500$ 0.0617

Availability 305
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.0962
50$ 0.0942
150$ 0.0928
500$ 0.0617

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
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We are delighted to provide the SI2319DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2319DS-T1-GE3 is a P Channel MOSFETs made by VBsemi Elec and is manufactured in a SOT-23-3 package compliant with ROHS standards. It has an operating voltage of 30V and a current rating of 5.6A. Its maximum drain-source on resistance at 10V is 55mO and it can handle up to 4.4A with a maximum dissipation of 2.5W.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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