Product Information

VB1330

VB1330 electronic component of VBsemi Elec

Datasheet
MOSFET N Trench 30V 6.5A (Tc) 2V @ 250uA 30 mΩ @ 3.2A,10V SOT-23-3 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.0913 ea
Line Total: USD 0.46

1779 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
887 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

VB1330
VBsemi Elec

5 : USD 0.1117
50 : USD 0.0913
150 : USD 0.0811
500 : USD 0.0736
3000 : USD 0.0603
6000 : USD 0.0573

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VB1330 with MOSFET N Trench 30V 6.5A (Tc) 2V @ 250uA 30 mO @ 3.2A,10V SOT-23-3 RoHS by VBsemi Elec is an electronic part with 30V drain-source breakdown voltage and 6.5A drain current rating. It has a gate-source threshold voltage of 2V @ 250uA and has a drain-source on-state resistance of 30mO at 3.2A. This part has an SOT-23-3 package, is RoHS compliant, and it is manufactured by VBsemi Elec.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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