Product Information

VB1695

VB1695 electronic component of VBsemi Elec

Datasheet
MOSFET N Trench 60V 4A (Tc) 3V @ 250uA 85 mΩ @ 1.9A,10V SOT-23-3 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3048 ea
Line Total: USD 1.52

1086 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
480 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

VB1695
VBsemi Elec

5 : USD 0.2565
50 : USD 0.2101
150 : USD 0.1899
500 : USD 0.1652
3000 : USD 0.1368
6000 : USD 0.1303

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VB1695 is an N-Channel Trench MOSFET device designed by VBsemi Elec and manufactured as a SOT-23-3 RoHS package. It is rated at 60V 4A (Tc) with a low on-state resistance of 85 mO at 1.9A, and a gate threshold voltage of 10V. The maximum gate-source voltage is 20V and the gate-charge is rated at 250uA. It is ideal for use in applications requiring low gate charge, low on-state resistance and low threshold voltage.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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