Product Information

VBA1104N

VBA1104N electronic component of VBsemi Elec

Datasheet
MOSFET N Trench 100V 6.4A (Tc) 3V @ 250uA 40 mΩ @ 5A,10V SO-8 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8548 ea
Line Total: USD 0.85

1 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
97 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

VBA1104N
VBsemi Elec

1 : USD 0.6596
10 : USD 0.5509
30 : USD 0.4967
100 : USD 0.4423
500 : USD 0.3879
1000 : USD 0.3711

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VBA1104N is a vertical MOSFET N Trench Device manufactured by VBsemi Elec. It is designed for switching applications and features a 100V breakdown voltage, 6.4A (Tc) current rating, 3V @ 250uA gate threshold voltage, 40 mΩ @ 5A,10V on-state resistance, and comes packaged in an 8-pin SO-8 RoHS compliant package. This device is suitable for use in automotive, consumer, industrial, and military applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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