Product Information

VBA1203M

VBA1203M electronic component of VBsemi Elec

Datasheet
MOSFET N Channel 200V 3A 4V @ 250uA 260mO @ 3A,10V SO-8 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5121 ea
Line Total: USD 0.51

6922 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4296 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

VBA1203M
VBsemi Elec

1 : USD 0.4883
10 : USD 0.4385
30 : USD 0.4142
100 : USD 0.39
500 : USD 0.3418
1000 : USD 0.3353

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VBA1203M is a MOSFET N Channel 200V 3A 4V @ 250uA 260mO @ 3A, 10V SO-8 RoHS manufactured by VBsemi Elec. It is a low on-resistance, low gate threshold voltage, high speed switching device, designed for low voltage and high current applications. The device features an SO-8 RoHS compliant package, making it ideal for use in space-constrained applications. It offers superior switching performance and is capable of handling up to 3A of continuous current. Its maximum voltage rating is 200V, and its maximum breakdown voltage is 4V @ 250uA and 260mO @ 3A, 10V. The device also has an advanced thermal pad design for improved heat dissipation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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