Product Information

VBA5638

VBA5638 electronic component of VBsemi Elec

Datasheet
MOSFET N & P Trench 60V 5.3A (Tc),4.9A (Tc) 3V @ 250uA 28 mΩ @ 4.3A,10V;60 mΩ @ 3.1A,10V SO-8 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8914 ea
Line Total: USD 0.89

339 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
339 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

VBA5638
VBsemi Elec

1 : USD 0.7514
10 : USD 0.6314
30 : USD 0.5716
100 : USD 0.5117
500 : USD 0.4272
1000 : USD 0.4085

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The VBA5638 with MOSFET N & P Trench 60V 5.3A (Tc),4.9A (Tc) 3V @ 250uA 28 mΩ @ 4.3A, 10V;60 mΩ @ 3.1A, 10V SO-8 RoHS manufactured by VBsemi Elec is an energy and space saving discrete power switching device with higher power switching capability for automotive applications. It offers an improved on-state RDS(on), low gate charge Qgd, superior Avalanche energy withstand and faster safe operating area for more system efficiency. It operates in various inductive and capacitor load environments with a wide range of voltage from 6V to 60V and up to 5.3A with Tc junction temperature, under 175°C. Additionally, this electronic part also operates with an on-state resistance of 28mΩ maximum @ 4.3A, 10V and up to 60mΩ @ 3.1A, 10V and a gate to source leakage of 250uA at 3V. It is a RoHS compliant part with an SO-8 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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