Product Information

VS4602AP

VS4602AP electronic component of Vanguard

Datasheet
MOSFET N Trench 40V 220A (Tc) 3.9V @ 250uA 2.5 mΩ @ 30A,10V PDFN5*6 RoHS
Manufacturer: Vanguard
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2509 ea
Line Total: USD 1.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

VS4602AP
Vanguard

1 : USD 1.2509
10 : USD 1.0424
30 : USD 0.8917
100 : USD 0.7661
500 : USD 0.746
1000 : USD 0.736

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

.The VS4602AP MOSFET N Trench 40V 220A (Tc) 3.9V @ 250uA 2.5 mΩ @ 30A, 10V PDFN5*6 RoHS manufactured by Vanguard is an integrated circuit (IC) for power management applications. It is designed to provide high power density and efficiency while offering switching up to 220A at 40V, a high threshold voltage of 3.9V, low on-resistance of 2.5mO at 30A and a static drain to source on-resistance of 10V at 250µA. The device is built with a proprietary vertical-trench N-channel MOSFET process, and it comes in a small 5mm*6mm package with low-profile capability, to maximize board area and to minimize power losses due to its small parasitic inductance. The VS4602AP meets the EU RoHS (Restriction of Hazardous Substances) standards and is qualified under AEC-Q100.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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