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VBE1302

VBE1302 electronic component of VBsemi Elec
Images are for reference only
See Product Specifications
Part No.VBE1302
Manufacturer: VBsemi Elec
Category:MOSFET
Description: MOSFET N Channel 30V 120A(Tc) 2.5V @ 250uA 2.3mO @ 38.8A,10V TO252 RoHS
Datasheet: VBE1302 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.104 ea
Line Total: USD 1.1

2190 - Global Stock
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1763 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8963
10 : USD 0.8174
30 : USD 0.7733
100 : USD 0.7243
500 : USD 0.5997
1000 : USD 0.5902

We proudly offer the VBE1302 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the VBE1302 MOSFET.
     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The VBE1302 is a MOSFET N channel transistor from VBsemi Elec and has the following specifications: operating voltage of 30V, continuous drain current of 120A (Tc), gate-source threshold voltage of 2.5V @ 250uA, drain-source on-resistance of 2.3mO @ 38.8A, and package type of TO252 RoHS. It is suitable for use in dc and ac switching circuits and other applications where power dissipation and high breakdown voltage are required.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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