VBE2658 VBsemi Elec

VBE2658 electronic component of VBsemi Elec
VBE2658 VBsemi Elec
VBE2658 MOSFETs
VBE2658  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VBE2658 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE2658 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.VBE2658
Manufacturer:VBsemi Elec
Category:MOSFETs
Description:MOSFET P Trench 60V 25A 3V @ 250uA 70 mΩ @ 5A,4.5V TO-252 RoHS
Datasheet:VBE2658 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 1.2573 ea
Line Total: USD 1.26 
Availability : 0
  
QtyUnit Price
1$ 1.2573
10$ 1.0184
30$ 0.6742
100$ 0.5281
500$ 0.4557
1000$ 0.4315
  

Availability0
Ship by Thu. 25 Jun to Wed. 01 Jul
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2573
10$ 1.0184
30$ 0.6742
100$ 0.5281
500$ 0.4557
1000$ 0.4315

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VBE2658 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE2658 and other electronic components in the MOSFETs category and beyond.

ImagePart-Description
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MOSFET N Channel 30V 100A 2.5V @ 250uA 3.5mO @ 100A,10V TO251 RoHS
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MOSFET N Channel 30V 53A 3V @ 250uA 70mO @ 53A,10V TO251 RoHS
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ImagePart-Description
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MOSFET N Trench 100V 4.2A 3V @ 250uA 125 mΩ @ 1A,4.5V SOT-89-3 RoHS
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Stock ImageVBI1695
MOSFET N Trench 60V 7.1A 3V @ 250uA 88 mΩ @ 10A,4.5V SOT-89-3 RoHS
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Stock ImageVBI2338
MOSFET P Trench 30V 7.6A 2.5V @ 250uA 56 mΩ @ 5.6A,4.5V SOT-89-3 RoHS
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MOSFET N Trench 200V 1A 4V @ 250uA 1.2 Ω @ 580mA,10V SOT-223 RoHS
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Stock ImageVBJ1695
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Stock ImageVBJ2102M
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Stock ImageVBJ2456
MOSFET P Trench 35V 6.2A 1.8V @ 250uA 60 mΩ @ 4A,4.5V SOT-223 RoHS
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ronicsThe VBE2658 with MOSFET P Trench 60V 25A is a power FET transistor manufactured by VBsemi Electronics. It is a three-terminal, insulated-gate bipolar transistor with a maximum drain-to-source voltage of 60V and a maximum continuous drain current of 25A. This transistor has a heavily doped P-Drain which enhances its breaking capacity and allows high blocking voltages, making it ideal for high-power switching applications. Its low on-state resistance ensures high efficiency, and its high threshold voltage gives it superior immunity to dv/dt and EMI. The VBE2658 has a breakdown voltage of 3V @ 250uA and a drain-source resistance of 70mΩ @ 5A,4.5V. It comes in a TO-252 RoHS package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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