Product Information

VBQF2309

VBQF2309 electronic component of VBsemi Elec

Datasheet
MOSFET DFN8(3x3) RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8056 ea
Line Total: USD 0.81

127 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
127 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

VBQF2309
VBsemi Elec

1 : USD 0.7634
10 : USD 0.6333
30 : USD 0.5682
100 : USD 0.5031
500 : USD 0.4045
1000 : USD 0.3847

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The VBQF2309 is an enhancement-mode MOSFET packaged in a DFN8(3x3) RoHS compliant package, manufactured by VBsemi Elec. This MOSFET is designed for low-voltage, low- current applications, making it suitable for switching operations at low gate drive voltages. It has low on-state resistance and low gate charge, and is capable of switching signal frequencies of up to 50 kHz with minimal switching losses. This device is rated for a 100V breakdown voltage, and has a drain current rating of 230mA. It is designed to handle temperatures of -55 to 175°C, enabling it to be used in a wide range of industrial applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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