Product Information

VBQG4240

VBQG4240 electronic component of VBsemi Elec

Datasheet
MOSFET DFN6(2X2) RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9472 ea
Line Total: USD 0.95

90 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
38 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

VBQG4240
VBsemi Elec

1 : USD 0.9725
10 : USD 0.8069
30 : USD 0.7221
100 : USD 0.6392
500 : USD 0.5899
1000 : USD 0.5662

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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Additional Infomation About Product

The VBQG4240 MOSFET is a dual N-channel MOSFET manufactured by VBsemi Elec. It is packaged in a small DFN6(2x2) RoHS package and is designed for low-voltage switching/amplification applications. The device features low RDS(on), low gate charge, low threshold voltage, and fast switching speed. Its gate source breakdown voltage is rated at +-20V, and its maximum drain current is set at 7A. The operating temperature range for this device is -55ËšC to +150ËšC.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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