1N4448W-E3-18

1N4448W www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS 1N4448W-E3-08 or 1N4448W-E3-18 1N4448W Single A3 Tape and reel 1N4448W-HE3-08 or 1N4448W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Average rectified current half wave f 50 Hz I 150 mA (1) F(AV) rectification with resistive load Surge current t < 1 s and T = 25 C I 500 mA j FSM (1) Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 350 K/W thJA Junction temperature T 150 C j Storage temperature T -65 to +150 C stg Operating temperature T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.6, 23-Feb-18 Document Number: 85722 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4448W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 5 mA V 0.62 0.72 V F F V = 20 V I 25 nA R R Leakage current V = 75 V I 5A R R V = 20 V, T = 150 C I 50 A R J R Capacitance V = V = 0 V 4 pF F R I = 10 mA, i = 1 mA, F R Reverse recovery time t 4ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb mW 3 10 1000 900 2 T = 100 C 800 10 j 700 P T = 25 C tot j 10 600 500 1 400 300 - 1 10 200 100 - 2 10 0 0 12 0 100 200 C 18105 V (V) F 17439 T amb Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 4 10 T = 25 C j T = 25 C 5 j 1.1 f = 1 MHz f = 1 kHz 2 3 10 1.0 5 2 0.9 2 10 5 0.8 2 10 5 0.7 2 082416 0 -2 -1 2 10 1011100 17440 V (V) R 17438 I (mA) F Fig. 2 - Dynamic Forward Resistance vs. Forward Current Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 1.6, 23-Feb-18 Document Number: 85722 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R () I (mA) f F C (V ) D R C (0 V) D