X-On Electronics has gained recognition as a prominent supplier of 2N7002K-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002K-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002K-T1-E3 Vishay

2N7002K-T1-E3 electronic component of Vishay
2N7002K-T1-E3 Vishay
2N7002K-T1-E3 MOSFETs
2N7002K-T1-E3  Semiconductors

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See Product Specifications
Part No. 2N7002K-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds 20V Vgs SOT-23
Datasheet: 2N7002K-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6270: USD 0.0415 ea
Line Total: USD 260.21 
Availability - 296820
Ship by Thu. 08 May to Wed. 14 May
MOQ: 6270  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
296820
Ship by Thu. 08 May to Wed. 14 May
MOQ : 6270
Multiples : 3000
6270 : USD 0.0415
9000 : USD 0.0404
12000 : USD 0.0402
30000 : USD 0.0379
45000 : USD 0.037

1881
Ship by Thu. 15 May to Tue. 20 May
MOQ : 10
Multiples : 10
10 : USD 0.1346
100 : USD 0.1092
300 : USD 0.0723
3000 : USD 0.0541
6000 : USD 0.0489
9000 : USD 0.0463

557810
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.2713
100 : USD 0.1644
500 : USD 0.0935
1000 : USD 0.0682
3000 : USD 0.0594
6000 : USD 0.0528
9000 : USD 0.0473
24000 : USD 0.0407

1727
Ship by Tue. 06 May to Thu. 08 May
MOQ : 1
Multiples : 1
1 : USD 0.14
50 : USD 0.119
100 : USD 0.1064
364 : USD 0.0518
1000 : USD 0.049

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002K-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002K-T1-E3 and other electronic components in the MOSFETs category and beyond.

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2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES SOT-23 (TO-236) Low on-resistance: 2 Low threshold: 2 V (typ.) D Available 3 Low input capacitance: 25 pF Available Fast switching speed: 25 ns Low input and output leakage Available TrenchFET power MOSFET 2 2000 V ESD protection S Material categorization: for definitions of compliance 1 please see www.vishay.com/doc 99912 G Note Top View * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For Marking code: 7K example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY BENEFITS V (V) 60 DS Low offset voltage R max. ( ) at V = 10 V 2 DS(on) GS Low voltage operation Q typ. (nC) 0.4 g Easily driven without buffer I (A) 0.3 D High speed circuits Configuration Single Low error voltage APPLICATIONS D Direct logic-level interface: TTL/CMOS Drivers: G relays, solenoids, lamps, hammers, display, memories, transistors, etc. Battery operated systems Solid state relays S N-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free 2N7002K-T1-E3 Lead (Pb)-free and halogen-free 2N7002K-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 0.3 A b Continuous drain current (T = 150 C) I J D T = 100 C 0.19 A A a Pulsed drain current I 0.8 DM T = 25 C 0.35 A b Power dissipation P W D T = 100 C 0.14 A b Maximum junction-to-ambient R 350 C/W thJA Operating junction and storage temperature range T T -55 to +150 C J, stg Notes a. Pulse width limited by maximum junction temperature b. Surface mounted on FR4 board S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2N7002K www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 10 A 60 - - DS GS D V Gate-threshold voltage V V = V , I = 250 A 1 - 2.5 GS(th) DS GS D V = 0 V, V = 20 V - - 10 DS GS A V = 0 V, V = 15 V - - 1 DS GS Gate-body leakage I V = 0 V, V = 10 V - - 150 GSS DS GS V = 0 V, V = 10 V, T = 85 C - - 1000 nA DS GS J V = 0 V, V = 5 V - - 100 DS GS V = 60 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 60 V, V = 0 V, T = 125 C - - 500 DS GS J V = 10 V, V = 7.5 V 800 - - GS DS b On-state drain current I mA D(on) V = 4.5 V, V = 10 V 500 - - GS DS V = 10 V, I = 500 mA - - 2 GS D b Drain-source on-resistance R DS(on) V = 4.5 V, I = 200 mA - - 4 GS D b Forward transconductance g V = 10 V, I = 200 mA 100 - - mS fs DS D Diode forward voltage V I = 200 mA, V = 0 V - - 1.3 V SD S GS a, b Dynamic V = 10 V, V = 4.5 V DS GS Total gate charge Q -0.4 0.6 nC g I 250 mA D Input capacitance C -30 - iss V = 25 V, V = 0 V DS GS Output capacitance C -6 - pF oss f = 1 MHz Reverse transfer capacitance C -2.5 - rss a, c Switching Turn-on time t -- 25 d(on) V = 30 V, R = 150 DD L ns I 200 mA, V = 10 V, R = 10 Turn-off time t D GEN g -- 35 d(off) Notes a. For DESIGN AID ONLY, not subject to production testing b. Pulse test: pulse width 300 s duty cycle 2 % c. Switching time is essentially independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1299-Rev. F, 21-Aug-17 Document Number: 71333 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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