BAS19-E3-18

BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diode 3 Fast switching diode in case SOT-23, especially suited for automatic insertion. AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade 12 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE TYPE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS DIFFERENTIATION MARKING BAS19-E3-08 or BAS19-E3-18 BAS19 V = 100 V A8 Single Tape and reel R BAS19-HE3-08 or BAS19-HE3-18 BAS20-E3-08 or BAS20-E3-18 BAS20 V = 150 V A81 Single Tape and reel R BAS20-HE3-08 or BAS20-HE3-18 BAS21-E3-08 or BAS21-E3-18 BAS21 V = 200 V A82 Single Tape and reel R BAS21-HE3-08 or BAS21-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAS19 V 100 V R Continuous reverse voltage BAS20 V 150 V R BAS21 V 200 V R BAS19 V 120 V RRM Repetitive peak reverse voltage BAS20 V 200 V RRM BAS21 V 250 V RRM Non repetitive peak forward t = 1 s I 2.5 A FSM current Non repetitive peak forward t = 1 s I 0.5 A FSM surge current Maximum average forward (av. over any 20 ms period) I 200 mA (1) F(AV) rectified current (2) DC forward current I 200 mA F Repetitive peak forward current I 625 mA FRM (2) Power dissipation P 250 mW tot Notes (1) Measured under pulse conditions pulse time = t 0.3 ms p (2) Device on fiberglass substrate, see layout on next page Rev. 1.2, 13-Feb-18 Document Number: 85540 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAS19, BAS20, BAS21 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 C thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate, see layout drawing below ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1.0 V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAS19 I 100 nA R R V = 150 V BAS20 I 100 nA R R Leakage current V = 200 V BAS21 I 100 nA R R V = V , T = 150 C I 100 A R Rmax. j R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 5pF R D I = I = 30 mA, R = 100 , F R L Reverse recovery time t 50 ns rr i = 3 mA R LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 1.2, 13-Feb-18 Document Number: 85540 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000