BAS70-00 to BAS70-06 www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual FEATURES These diodes feature very low turn-on voltage and fast switching These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade BAS70-00 BAS70-04 3 3 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance Top View please see www.vishay.com/doc 99912 1 2 1 2 MECHANICAL DATA Case: SOT-23 BAS70-05 BAS70-06 Weight: approx. 8.8 mg 3 3 Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box Top View 08/3K per 7 reel (8 mm tape), 15K/box 1 2 1 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAS70-00-E3-08 or BAS70-00-E3-18 BAS70-00 Single 73 BAS70-00-HE3-08 or BAS70-00-HE3-18 BAS70-04-E3-08 or BAS70-04-E3-18 BAS70-04 Dual serial 74 BAS70-04-HE3-08 or BAS70-04-HE3-18 Tape and reel BAS70-05-E3-08 or BAS70-05-E3-18 BAS70-05 Common cathode 75 BAS70-05-HE3-08 or BAS70-05-HE3-18 BAS70-06-E3-08 or BAS70-06-E3-18 BAS70-06 Common anode 76 BAS70-06-HE3-08 or BAS70-06-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V = V = V 70 V RRM RRM R (1) Forward continuous current I 200 mA F (1) Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation P 200 mW tot Note (1) Device on fiberglass substrate, see layout on next page THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 500 K/W thJA Junction temperature T 125 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +125 C op Note (1) Device on fiberglass substrate, see layout on next page Rev. 2.2, 13-Feb-18 Document Number: 85702 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS70-00 to BAS70-06 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve beakdown voltage I = 10 A (pulsed) V 70 V R (BR) Leakage current V = 50 V I 20 100 nA R R Forward voltage I = 1.0 mA V 410 mV F F (1) Forward voltage I = 15 mA V 1000 mV F F Diode capacitance V = 0 V, f = 1 MHz C 1.5 2 pF R D I = I = 10 mA, i = 1 mA, F R R Reserve recovery time t 5ns rr R = 100 L Note (1) Pulse test t 300 s p LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 ) Copper leads 0.3 mm (0.012 ) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 PACKAGE DIMENSIONS in millimeters (inches): SOT-23 3.1 (0.122) 0.550 ref. (0.022 ref.) 2.8 (0.110) 0.5 (0.020) 0.45 (0.018) 0.45 (0.018) 0.3 (0.012) 2.6 (0.102) 0.35 (0.014) 0.35 (0.014) 2.35 (0.093) 0.45 (0.018) 0.35 (0.014) Foot print recommendation: 0.7 (0.028) 1 (0.039) 1 (0.039) 0.9 (0.035) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) Document no.: 6.541-5014.01-4 Rev. 8 - Date: 23.Sept.2009 17418 Rev. 2.2, 13-Feb-18 Document Number: 85702 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0 to 8 1.43 (0.056) 0.1 (0.004) max. 1.20 (0.047) 0.175 (0.007) 0.098 (0.004) 2 (0.079) 0.2 (0.008) 1.15 (0.045) 0.9 (0.035) 0.9 (0.035)