BAS85 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in a DO-35 case with type designation BAT85 AEC-Q101 qualified DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available APPLICATIONS MECHANICAL DATA Applications where a very low forward voltage is required Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS85 BAS85-GS18 or BAS85-GS08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 30 V R (1) Forward continuous current I 200 mA F (1) Peak forward current I 300 mA FM (1) Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation T = 65 C P 200 mW amb tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 125 C j Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.0, 19-Jun-17 Document Number: 85510 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS85 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reserve breakdown voltage I = 10 A (pulsed) V 30 V R (BR) Leakage current V = 25 V I 0.2 2 A R R Pulse test t < 300 s, p V 240 mV F I = 0.1 mA F Pulse test t < 300 s, I = 1 mA V 320 mV p F F Pulse test t < 300 s, p V 400 mV F Forward voltage I = 10 mA F Pulse test t < 300 s, p V 500 mV F I = 30 mA F Pulse test t < 300 s, p V 800 mV F I = 100 mA F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D I = 10 mA, I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 200 V = 30 V 180 R V = V R RRM 160 140 100 R = 540 kW thJA 120 P - Limit R at 100 % V 100 R 80 10 P - Limit 60 R at 80 % V R 40 20 1 0 25 50 75 100 125 150 25 50 75 100 125 150 15822 15823 T - Junction Temperature (C) T - Junction Temperature (C) j j Fig. 3 - Reverse Current vs. Junction Temperature Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature 10 1000 f = 1 MHz 9 T = 125 C j 8 100 7 6 T = 25 C j 5 10 4 3 1 2 1 0 0.1 0.1 1 10 100 0 0.5 1.0 1.5 15825 V - Reverse Voltage (V) V - Forward Voltage (V) R 15824 F Fig. 4 - Diode Capacitance vs. Reverse Voltage Fig. 2 - Forward Current vs. Forward Voltage Rev. 2.0, 19-Jun-17 Document Number: 85510 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) P - Reverse Power Dissipation (mW) F R I - Reverse Current (A) R C - Diode Capacitance (pF) D