BAV17-TR

BAV17, BAV18, BAV19, BAV20, BAV21 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS General purposes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BAV17 V = 25 V BAV17-TR or BAV17-TAP BAV17 Single Tape and reel / ammopack RRM BAV18 V = 60 V BAV18-TR or BAV18-TAP BAV18 Single Tape and reel / ammopack RRM BAV19 V = 120 V BAV19-TR or BAV19-TAP BAV19 Single Tape and reel / ammopack RRM BAV20 V = 200 V BAV20-TR or BAV20-TAP BAV20 Single Tape and reel / ammopack RRM BAV21 V = 250 V BAV21-TR or BAV21-TAP BAV21 Single Tape and reel / ammopack RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV17 V 25 V RRM BAV18 V 60 V RRM Repetitive peak reverse voltage BAV19 V 120 V RRM BAV20 V 200 V RRM BAV21 V 250 V RRM BAV17 V 20 V R BAV18 V 50 V R Reverse voltage BAV19 V 100 V R BAV20 V 150 V R BAV21 V 200 V R Forward continuous current I 250 mA F Peak forward surge current t = 1 s, T = 25 C I 1A p j FSM Forward peak current f = 50 Hz I 625 mA FRM Power dissipation P 500 mW tot Rev. 1.9, 12-Jul-17 Document Number: 85543 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV17, BAV18, BAV19, BAV20, BAV21 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 300 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F V = 20 V BAV17 I 100 nA R R V = 50 V BAV18 I 100 nA R R V = 100 V BAV19 I 100 nA R R V = 150 V BAV20 I 100 nA R R V = 200 V BAV21 I 100 nA R R Reverse current T = 100 C, V = 20 V BAV17 I 15 A j R R T = 100 C, V = 50 V BAV18 I 15 A j R R T = 100 C, V = 100 V BAV19 I 15 A j R R T = 100 C, V = 150 V BAV20 I 15 A j R R T = 100 C, V = 200 V BAV21 I 15 A j R R BAV17 V 25 V (BR) BAV18 V 60 V (BR) I = 5 A, t /T = 0.01, R p Breakdown voltage BAV19 V 120 V (BR) t = 0.3 ms p BAV20 V 200 V (BR) BAV21 V 250 V (BR) Diode capacitance V = 0 V, f = 1 MHz, C 1.5 pF R D Differential forward resistance I = 10 mA r 5 F f I = I = 30 mA, i = 3 mA F R R Reverse recovery time t 50 ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T = 25 C 100 j 100 Scattering Limit 10 Scattering Limit 10 1 V = V 1 R RRM 0.1 0.01 0.1 200 2.0 0 40 80 120 160 0 0.4 0.8 1.2 1.6 94 9084 T - Junction Temperature (C) 94 9085 V - Forward Voltage (V) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 12-Jul-17 Document Number: 85543 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) R I - Forward Current (mA) F