BAV300, BAV301, BAV302, BAV303 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes Saving space Hermetic sealed parts Fits onto SOD-323/SOT-23 footprints Electrical data identical with the devices BAV100 to BAV103, BAV200 to BAV203 AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started APPLICATIONS General purposes Models Available MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes / options: TR3/10K per 13 reel (8 mm tape), 10K/box TR/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAV300 V = 60 V BAV300-TR3 or BAV300-TR Single Tape and reel RRM BAV301 V = 120 V BAV301-TR3 or BAV301-TR Single Tape and reel RRM BAV302 V = 200 V BAV302-TR3 or BAV302-TR Single Tape and reel RRM BAV303 V = 250 V BAV303-TR3 or BAV303-TR Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV300 V 60 V RRM BAV301 V 120 V RRM Repetitive peak reverse voltage BAV302 V 200 V RRM BAV303 V 250 V RRM BAV300 V 50 V R BAV301 V 100 V R Reverse voltage BAV302 V 150 V R BAV303 V 200 V R Forward continuous current I 250 mA F Peak forward surge current t = 1 s, T = 25 C I 1A p j FSM Forward peak current f = 50 Hz I 625 mA FM Rev. 2.2, 12-Jul-17 Document Number: 85545 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV300, BAV301, BAV302, BAV303 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Mounted on epoxy-glass hard tissue, fig. 4 Thermal resistance junction to ambient air R 500 K/W thJA 2 35 m copper clad, 0.9 mm copper area per electrode Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F V = 50 V BAV300 I 100 nA R R V = 100 V BAV301 I 100 nA R R V = 150 V BAV302 I 100 nA R R V = 200 V BAV303 I 100 nA R R Reverse current T = 100 C, V = 50 V BAV300 I 15 A j R R T = 100 C, V = 100 V BAV301 I 15 A j R R T = 100 C, V = 150 V BAV302 I 15 A j R R T = 100 C, V = 200 V BAV303 I 15 A j R R BAV300 V 60 V (BR) BAV301 V 120 V (BR) I = 100 A, t /T = 0.01, R p Breakdown voltage t = 0.3 ms p BAV302 V 200 V (BR) BAV303 V 250 V (BR) Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D Differential forward resistance I = 10 mA r 5 F f I = I = 30 mA, i = 3 mA, F R R Reverse recovery time t 50 ns rr R = 100 L Rev. 2.2, 12-Jul-17 Document Number: 85545 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000