Product Information

EGF1B-E3/5CA

EGF1B-E3/5CA electronic component of Vishay

Datasheet
Diode Switching 100V 1A 2-Pin DO-214BA T/R

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9487 ea
Line Total: USD 0.95

6305 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2444 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 0.6419
10 : USD 0.56
100 : USD 0.3975
500 : USD 0.3405
1000 : USD 0.2705
6500 : USD 0.2622
13000 : USD 0.2539
19500 : USD 0.2515

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Product
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
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333 3 EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor Surface-Mount Glass Passivated Ultrafast Rectifier FEATURES Superectifier structure for high reliability condition Superectier Cavity-free glass-passivated junction Ideal for automated placement Ultrafast reverse recovery time Low switching losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of GF1 (DO-214BA) 250 C AEC-Q101 qualified Cathode Anode - Automotive ordering code: base P/NHE3 Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. PRIMARY CHARACTERISTICS I 1.0 A F(AV) MECHANICAL DATA V 50 V, 100 V, 150 V, 200 V RRM Case: GF1 (DO-214BA), molded epoxy over glass body I 30 A FSM Molding compound meets UL 94 V-0 flammability rating t 50 ns rr Base P/N-E3 - RoHS-compliant, commercial grad e V 1.0 V Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified F (X denotes revision code e.g. A, B, ...) T max. 175 C J Package GF1 (DO-214BA) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 Circuit configuration Single E3 and HE3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT Device marking code EA EB EC ED Maximum repetitive peak reverse voltage V 50 100 150 200 V RRM Maximum RMS voltage V 35 70 105 140 V RMS Maximum DC blocking voltage V 50 100 150 200 V DC Maximum average forward rectified current at T = 125 C I 1.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 12-Nov-2020 Document Number: 88579 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT (1) Maximum instantaneous forward voltage 1.0 A V 1.0 V F T = 25 C 5.0 A Maximum DC reverse current (1) I A R at rated DC blocking voltage T = 125 C 50 A I = 0.5 A, I = 1.0 A, F R Typical reverse recovery time t 50 ns rr I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 15 pF J Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGF1A EGF1B EGF1C EGF1D UNIT (1) R 85 JA Typical thermal resistance C/W (1) R 30 JL Note (1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGF1D-E3/67A 0.104 67A 1500 7 diameter plastic tape and reel EGF1D-E3/5CA 0.104 5CA 6500 13 diameter plastic tape and reel (1) EGF1DHE3 B/H 0.104 H 1500 7 diameter plastic tape and reel (1) EGF1DHE3 B/I 0.104 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise specified) A 1.0 30 T = T Max. J J 25 8.3 ms Single Half Sine-Wave 20 0.5 15 10 Resistive or Inductive Load P.C.B. Mounted on 5 0.2 x 0.2 (5.0 mm x 5.0 mm) Copper Pad Areas 0 0 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 12-Nov-2020 Document Number: 88579 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Peak Forward Surge Current (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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