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NRVHP620MFDT1G

NRVHP620MFDT1G electronic component of ON Semiconductor
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Part No. NRVHP620MFDT1G
Manufacturer: ON Semiconductor
Category: Rectifiers
Description: Diode Switching Diode 200V 3A 8-Pin DFN T/R
Datasheet: NRVHP620MFDT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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NHP620MFD, NRVHP620MFD Switch-mode Power Rectifier This ultrafast rectifier in the dual flag SO8 flat lead package offers designers a unique degree of versatility and design freedom. The two NHP620MFD, NRVHP620MFD MAXIMUM RATINGS (per diode unless noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 200 R Average Rectified Forward Current I 3.0 A F(AV) (Rated V , T = 167C) R C Peak Repetitive Forward Current, I 6.0 A FRM (Rated V , Square Wave, 20 kHz, T = 165C) R C NonRepetitive Peak Surge Current I 80 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +175 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 10 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (per diode unless noted) Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 3.4 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS (per diode unless noted) Instantaneous Forward Voltage (Note 1) v V F (i = 3.0 Amps, T = 125C) 0.76 0.85 F J (i = 3.0 Amps, T = 25C) 0.935 1.0 F J (i = 6.0 Amps, T = 125C) 0.86 0.91 F J (i = 6.0 Amps, T = 25C) 1.02 1.090 F J Instantaneous Reverse Current (Note 1) i A R (Rated dc Voltage, T = 125C) 6.00 35 J (Rated dc Voltage, T = 25C) 0.012 0.5 J Reverse Recovery Time t 18 25 ns rr I = 3.0 A, V = 30 V, dl/dt = 50 A/ s, T = 25C F R J Reverse Recovery Time t 40 50 ns rr I = 3.0 A, V = 30 V, dl/dt = 50 A/ s, T = 50C F R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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