IL1, IL2, IL5 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES Current transfer ratio (see order information) 1 6 A B Isolation test voltage 5300 V RMS 5 C 2 C Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC 3 4 NC E and WEEE 2002/96/EC i179004 AGENCY APPROVALS DESCRIPTION UL1577, file no. E52744 system code H or J, double The IL1, IL2, IL5 are optically coupled isolated pairs protection employing GaAs infrared LEDs and silicon NPN DIN EN 60747-5-5 (VDE 0884) available with option 1 phototransistor. Signal information, including a DC level, can BSI IEC 60950 IEC 60065 be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The IL1, IL2, IL5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. These couplers can be used also to replace relays and transformers in many digital interface applications such as CRT modulation. ORDER INFORMATION PART REMARKS IL1 CTR > 20 %, DIP-6 IL2 CTR > 100 %, DIP-6 IL5 CTR > 50 %, DIP-6 IL1-X006 CTR > 20 %, DIP-6 400 mil (option 6) IL2-X006 CTR > 100 %, DIP-6 400 mil (option 6) IL2-X009 CTR >100 %, SMD-6 (option 9) IL5-X009 CTR > 50 %, SMD-6 (option 9) Note For additional information on the available options refer to option information. (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Surge current I 2.5 A FSM Power dissipation P 100 mW diss Derate linearly from 25 C 1.33 mW/C OUTPUT IL1 BV 50 V CEO Collector emitter breakdown voltage IL2 BV 70 V CEO IL5 BV 70 V CEO Emitter base breakdown voltage BV 7V EBO Collector base breakdown voltage BV 70 V CBO I 50 mA C Collector current t < 1.0 ms I 400 mA C Power dissipation P 200 mW diss Derate linearly from 25 C 2.6 mW/C www.vishay.com For technical questions, contact: optocoupler.answers vishay.com Document Number: 83612 294 Rev. 1.6, 10-Dec-08 IL1, IL2, IL5 Optocoupler, Phototransistor Vishay Semiconductors Output, with Base Connection (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT COUPLER Package power dissipation P 250 mW tot Derate linearly from 25 C 3.3 mW/C Isolation test voltage V 5300 V ISO RMS between emitter and detector Creepage distance 7mm Clearance distance 7mm Comparative tracking index per CTI 175 DIN IEC 112/VDE 0303, part 1 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T - 40 to + 150 C stg Operating temperature T - 40 to + 100 C amb Junction temperature T 100 C j (2) Soldering temperature 2.0 mm from case bottom T 260 C sld Notes (1) T = 25 C, unless otherwise specified. amb Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I = 60 mA V 1.25 1.65 V F F Breakdown voltage I = 10 A V 630 V R BR Reverse current V = 6.0 V I 0.01 10 A R R Capacitance V = 0 V, f = 1.0 MHz C 40 pF R O Thermal resistance junction to lead R 750 K/W thjl OUTPUT Collector emitter capacitance V = 5.0 V, f = 1.0 MHz C 6.8 pF CE CE Collector base capacitance V = 5.0 V, f = 1.0 MHz C 8.5 pF CB CB Emitter base capacitance V = 5.0 V, f = 1.0 MHz C 11 pF EB EB Collector emitter leakage voltage V = 10 V I 550 nA CE CEO Collector emitter saturation voltage I = 1.0 mA, I = 20 A V 0.25 V CE B CEsat Base emitter voltage V = 10 V, I = 20 A V 0.65 V CE B BE DC forward current gain V = 10 V, I = 20 A h 200 650 1800 CE B FE DC forward current gain saturated V = 0.4 V, I = 20 A h 120 400 600 CE B FEsat Thermal resistance junction to lead R 500 K/W thjl COUPLER Capacitance (input to output) V = 0 V, f = 1.0 MHz C 0.6 pF I-O IO 14 Insulation resistance V = 500 V R 10 I-O S Note T = 25 C, unless otherwise specified. amb Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Document Number: 83612 For technical questions, contact: optocoupler.answers vishay.com www.vishay.com Rev. 1.6, 10-Dec-08 295