IRF520S, SiHF520S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 100 DS Definition R ( )V = 10 V 0.27 DS(on) GS Surface Mount Available Q (Max.) (nC) 16 g Available in Tape and Reel Q (nC) 4.4 gs Dynamic dV/dt Rating Available Q (nC) 7.7 Repetitive Avalanche Rated gd Configuration Single 175 C Operating Temperature Fast Switching Ease of Paralleling D Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 D PAK (TO-263) Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. DESCRIPTION D Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, S S ruggedized device design, low on-resistance and N-Channel MOSFET cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) SiHF520S-GE3 Lead (Pb)-free and Halogen-free SiHF520STRR-GE3 SiHF520STRL-GE3 Lead (Pb)-free IRF520SPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 9.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 6.5 A C a Pulsed Drain Current I 37 DM Linear Derating Factor 0.40 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 200 mJ AS Avalanche Currenta I 9.2 A AR a Repetitive Avalanche Energy E 6.0 mJ AR Maximum Power Dissipation T = 25 C 60 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 3.5 mH, R = 25 , I = 9.2 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S16-1000-Rev. D, 23-May-16 Document Number: 91018 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF520S, SiHF520S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 5.5 A - - 0.27 DS(on) GS D b Forward Transconductance g V = 50 V, I = 5.5 A 2.7 - - S fs DS D Dynamic Input Capacitance C - 360 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -34- rss Total Gate Charge Q -- 16 g I = 9.2 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 4.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.7 gd Turn-On Delay Time t -8.8 - d(on) Rise Time t -30 - r V = 50 V, I = 9.2 A, DD D ns b R = 18 , R = 5.2 , see fig. 10 g D Turn-Off Delay Time t -19- d(off) Fall Time t -20- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 9.2 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 37 SM S b Body Diode Voltage V T = 25 C, I = 9.2 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 110 260 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.53 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-1000-Rev. D, 23-May-16 Document Number: 91018 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000