IRF530NPBF Infineon

IRF530NPBF electronic component of Infineon
IRF530NPBF Infineon
IRF530NPBF MOSFETs
IRF530NPBF  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IRF530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IRF530NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 17A 4V @ 250uA 90 mΩ @ 9A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF530NPBF Datasheet (PDF)
Price (USD)
5: USD 0.5842 ea
Line Total: USD 2.92 
Availability : 36219
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
5$ 0.5842
50$ 0.3294
150$ 0.2522
500$ 0.2128
2000$ 0.2019
5000$ 0.1955

Availability 42345
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 700
Multiples : 50
QtyUnit Price
700$ 0.3717
1250$ 0.3591
5000$ 0.3393
12500$ 0.3271


Availability 5864
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9825
10$ 0.7099
100$ 0.5331
500$ 0.4169
1000$ 0.3881
2000$ 0.3657
5000$ 0.3646
10000$ 0.3519


Availability 4218
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1398
10$ 0.8589
46$ 0.4043
127$ 0.3827


Availability 36219
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5842
50$ 0.3294
150$ 0.2522
500$ 0.2128
2000$ 0.2019
5000$ 0.1955


Availability 5307
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 515
Multiples : 1
QtyUnit Price
515$ 0.4901
736$ 0.3427
1000$ 0.2911


Availability 52543
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 395
Multiples : 1
QtyUnit Price
395$ 0.6383
445$ 0.5664
542$ 0.4651
1000$ 0.4195
2000$ 0.367
5000$ 0.3525
10000$ 0.349


Availability 60166
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 413
Multiples : 1
QtyUnit Price
413$ 0.6115
461$ 0.5475
554$ 0.4555
1000$ 0.4123
2000$ 0.3633
5000$ 0.3495
10000$ 0.3461


Availability 1701
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 215
Multiples : 1
QtyUnit Price
215$ 1.1765


Availability 485

Ships to you between
Tue. 07 Oct to Fri. 10 Oct
MOQ : 50
Multiples : 50
QtyUnit Price
50$ 0.336
100$ 0.3255
150$ 0.3192
200$ 0.315

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF530NPBF and other electronic components in the MOSFETs category and beyond.

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The IRF530NPBF is a MOSFET N Trench manufactured by Infineon with 100V, 17A, 4V and250uA ratings. It is packaged in the convenient TO-220-3 RoHS form factor. The device has a maximum drain to source voltage (VDS) of 100V, a continuous drain current (Id) of 17A and a gate to source voltage (VGS) of 4V. The device features a low RDS (on) of 90 milliohm at 9A and 10V. It also features reliable and robust 250 microA gate drive current capability. The infrared-reflow compatible lead-frame offers excellent thermal and electrical characteristics for improved power dissipation. This device is ideal for use in various power switching applications such as central office switching, appliance, automation and non-isolated battery operated systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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