IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available Surface Mount (IRLR024/SiHLR024) R ()V = 5.0 V 0.10 DS(on) GS RoHS* Straight Lead (IRLU024/SiHLU024) Q (Max.) (nC) 18 g COMPLIANT Available in Tape and Reel Q (nC) 4.5 gs Q (nC) 12 Logic-Level Gate Drive gd Configuration Single R Specified at V = 4 V and 5 V DS(on) GS Fast Switching D Lead (Pb)-free Available DPAK IPAK DESCRIPTION (TO-252) (TO-251) D Third generation Power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S S G cost-effectiveness. D G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRLU/SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a IRLR024PbF IRLR024TRPbF IRLU024PbF Lead (Pb)-free a SiHLR024-E3 SiHLR024T-E3 SiHLU024-E3 a IRLR024 IRLR024TR IRLU024 SnPb a SiHLR024 SiHLR024T SiHLU024 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 14 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 9.2 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 91 mJ AS Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 541 H, R = 25 , I = 14 A (see fig. 12). DD J G AS c. I 17 A, dI/dt 140 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91322 www.vishay.com S-82993-Rev. B, 19-Jan-09 1IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.068 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 8.4 A - - 0.10 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 7.0 A - - 0.14 GS D b Forward Transconductance g V = 25 V, I = 8.4 A 7.3 - - S fs DS D Dynamic Input Capacitance C - 870 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -53- rss Total Gate Charge Q -- 18 g I = 17 A, V = 48 V, D DS Gate-Source Charge Q --V = 5.0 V 4.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --12 gd Turn-On Delay Time t -11 - d(on) Rise Time t - 110 - r V = 30 V, I = 17 A, DD D ns b R = 9.0 , R = 1.7 , see fig. 10 G D Turn-Off Delay Time t -23- d(off) Fall Time t -41- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 14 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 56 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 260 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.75 1.5 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91322 2 S-82993-Rev. B, 19-Jan-09