IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Repetitive Avalanche Rated R ( )V = 5.0 V 0.27 DS(on) GS Surface Mount (IRLR120, SiHLR120) Q (Max.) (nC) 12 g Straight Lead (IRLU120, SiHLU120) Q (nC) 3.0 gs Available in Tape and Reel Q (nC) 7.1 gd Logic-Level Gate Drive Configuration Single R Specified at V = 4 V and 5 V DS(on) GS D Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK DESCRIPTION (TO-252) (TO-251) D Third generation power MOSFETs from Vishay provide the D G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S cost-effectiveness. G S D G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. The straight lead version (IRLU, SiHLU series) is for through-hole N-Channel MOSFET mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHLR120-GE3 SiHLR120TRL-GE3 SiHLR120TR-GE3 SiHLR120TRR-GE3 SiHLU120-GE3 a a a IRLR120PbF IRLR120TRLPbF IRLR120TRPbF IRLR120TRRPbF IRLU120PbF Lead (Pb)-free a a a SiHLR120-E3 SiHLR120TL-E3 SiHLR120T-E3 SiHLR120TR-E3 SiHLU120-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 7.7 C Continuous Drain Current V at 5.0 V I GS D T = 100 C 4.9 A C a Pulsed Drain Current I 31 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 210 mJ AS a Repetitive Avalanche Current I 7.7 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 5.3 mH, R = 25 , I = 7.7 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0167-Rev. D, 04-Feb-13 Document Number: 91324 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLR120, IRLU120, SiHLR120, SiHLU120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 5.0 V I = 4.6 A - - 0.27 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 3.9 A - - 0.38 GS D b Forward Transconductance g V = 50 V, I = 4.6 A 4.4 - - S fs DS D Dynamic Input Capacitance C - 490 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- 12 g I = 9.2 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 3.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.1 gd Turn-On Delay Time t -9.8 - d(on) Rise Time t -64 - r V = 50 V, I = 9.2 A, DD D ns b R = 9.0 , R = 5.2 , see fig. 10 g D Turn-Off Delay Time t -21- d(off) Fall Time t -27- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G c Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 7.7 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 31 SM S b Body Diode Voltage V T = 25 C, I = 7.7 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 110 140 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.80 1.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0167-Rev. D, 04-Feb-13 Document Number: 91324 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000