M6035C, M6045C, M6060C
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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
TO-220AB
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 C max., 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
3
please see www.vishay.com/doc?99912
2
1
PIN 1
PIN 2 TYPICAL APPLICATIONS
CASE
PIN 3 For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, Or-ing diodes,
DC/DC converters, or polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB
I 2 x 30 A
F(AV)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
V 35 V, 45 V, 60 V
RRM
Terminals: Matte tin plated leads, solderable per
I 320 A
FSM
J-STD-002 and JESD 22-B102
V 0.51 V, 0.56 V
F
E3 suffix meets JESD 201 class 1A whisker test
T max. 150 C
J
Polarity: As marked
Package TO-220AB
Mounting Torque: 10 in-lbs maximum
Diode variations Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M6035C M6045C M6060C UNIT
Maximum repetitive peak reverse voltage V 35 45 60 V
RRM
total device 60
Maximum average forward rectified current at (fig.1) I A
F(AV)
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed
I 320 A
FSM
on rated load per diode
Peak repetitive reverse current per diode at t = 2 s, 1 kHz per diode I 1.0 A
p RRM
) dV/dt 10 000 V/s
Voltage rate of change (rated V
R
Operating junction and storage temperature range T , T -65 to +150 C
J STG
Revision: 17-Aug-15 Document Number: 88965
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000M6035C, M6045C, M6060C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
M6035C M6045C M6060C
PARAMETER SYMBOL TEST CONDITIONS UNIT
TYP. MAX. TYP. MAX.
I = 10 A 0.42 - 0.43 -
F
I = 20 A T = 25 C 0.49 - 0.52 -
F J
I = 30 A 0.55 0.61 0.59 0.65
F
(1)
Instantaneous forward voltage per diode V V
F
I = 10 A 0.31 - 0.33 -
F
I = 20 A T = 125 C 0.42 - 0.47 -
F J
I = 30 A 0.51 0.56 0.56 0.61
F
T = 25 C 140 700 180 700 A
J
(2)
Reverse current per diode I V
R R
T = 125 C 106 175 140 175 mA
J
Typical junction capacitance C 4.0 V, 1 MHz 1170 - 970 - pF
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL M6035C M6045C M6060C UNIT
Typical thermal resistance per diode R 2.0 C/W
JC
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
M6045C-E3/45 2.068 45 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
80 25
D = 0.8
70 Resistive or Inductive Load D = 0.5
D = 0.3
20
60
D = 0.2
D = 1.0
50
15
40
D = 0.1
10
30
20
5
M6035C ~ M6045C
10
M6060C
0
0
025 50 75 100 125 150 175
0 5 10 15 20 25 30 35
Case Temperature (C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 17-Aug-15 Document Number: 88965
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current
Average Power Loss (W)