VS-MBRB1035PbF, VS-MBRB1045PbF Vishay High Power Products Schottky Rectifier, 10 A FEATURES 150 C T operation J 2 Base TO-220 and D PAK packages cathode Low forward voltage drop 2 High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability 3 1 2 N/C Anode D PAK Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified PRODUCT SUMMARY DESCRIPTION I 10 A F(AV) This Schottky rectifier has been optimized for low reverse V 35 V/45 V R leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 C I 15 mA at 125 C RM junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 F(AV) A I T = 135 C 20 FRM C V 35/45 V RRM I t = 5 s sine 1060 A FSM p V 10 Apk, T = 125 C 0.57 V F J T Range - 65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBRB1035PbFVS-MBRB1045PbFUNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 135 C, rated V 10 F(AV) C R Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 135 C 20 FRM R C Following any rated load A 5 s sine or 3 s rect. pulse condition and with rated 1060 V applied Non-repetitive surge current I RRM FSM Surge applied at rated load conditions halfwave, 150 single phase, 60 Hz Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94302 For technical questions, contact: diodestech vishay.com www.vishay.com Revision: 15-Mar-10 1 VS-MBRB1035PbF, VS-MBRB1045PbF Schottky Rectifier, 10 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 10 A 0.57 V FM T = 125 C J 20 A 0.72 T = 25 C 0.1 Maximum instantaneous reverse J (1) I Rated DC voltage mA RM current T = 125 C 15 J Threshold voltage V 0.354 V F(TO) T = T maximum J J Forward slope resistance r 17.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 600 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 65 to 150 J C Maximum storage temperature range T - 65 to 175 Stg Maximum thermal resistance, R DC operation 2.0 thJC junction to case C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.50 thCS case to heatsink (Only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) MBRB1035 2 Marking device Case style D PAK MBRB1045 www.vishay.com For technical questions, contact: diodestech vishay.com Document Number: 94302 2 Revision: 15-Mar-10