MBR(F,B)10H90, MBR(F,B)10H100
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Vishay General Semiconductor
High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AC
ITO-220AC
Guardring for overvoltage protection
Low power loss, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
2 High frequency operation
2
1
Meets MSL level 1, per J-STD-020, LF maximum peak of
1
MBR10H90
MBRF10H90
MBR10H100
245 C (for TO-263AB package)
MBRF10H100
PIN 1
PIN 1
Solder bath temperature 275 C maximum, 10 s, per
CASE
PIN 2
PIN 2
JESD 22-B106 (for TO-220AC and ITO-220AC package)
TO-263AB
AEC-Q101 qualified
K
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
TYPICAL APPLICATIONS
1
MBRB10H90 For use in high frequency rectifier of switching mode power
MBRB10H100
supplies, freewheeling diodes, DC/DC converters or polarity
PIN 1 K
protection application.
PIN 2 HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
PRIMARY CHARACTERISTICS
Molding compound meets UL 94-V-0 flammability rating
I 10 A
F(AV)
Base P/N-E3 - RoHS-compliant, commercial grade
V 90 V, 100 V Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
RRM
I 250 A Terminals: Matte tin plated leads, solderable per
FSM
J-STD-002 and JESD 22-B102
V 0.64 V
F
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
I 4.5 A
R
meets JESD 201 class 2 whisker test
T max. 175 C
J
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR10H90 MBR10H100 UNIT
Maximum repetitive peak reverse voltage V 90 100
RRM
90 100
Working peak reverse voltage V V
RWM
Maximum DC blocking voltage V 90 100
DC
Maximum average forward rectified current I 10
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 250 A
FSM
superimposed on rated load
Peak repetitive reverse current at t = 2.0 s, 1 kHz I 0.5
p RRM
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Operating junction and storage temperature range T , T - 65 to 175 C
J STG
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min V 1500 V
AC
Revision: 13-Jun-12 Document Number: 88667
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR(F,B)10H90, MBR(F,B)10H100
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
I = 10 A T = 25 C 0.77
F C
I = 10 A T = 125 C 0.64
F C
(1)
Maximum instantaneous forward voltage V V
F
I = 20 A T = 25 C 0.88
F C
I = 20 A T = 125 C 0.73
F C
T = 25 C 4.5 A
J
(2)
Maximum reverse current I Rated V
R R
T = 125 C 6.0 mA
J
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Typical thermal resistance R 2.7 5.8 2.7 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC MBR10H100-E3/45 1.80 45 50/tube Tube
ITO-220AC MBRF10H100-E3/45 1.94 45 50/tube Tube
TO-263AB MBRB10H100-E3/45 1.33 45 50/tube Tube
TO-263AB MBRB10H100-E3/81 1.33 81 800/reel Tape and reel
(1)
TO-220AC MBR10H100HE3/45 1.80 45 50/tube Tube
(1)
ITO-220AC MBRF10H100HE3/45 1.94 45 50/tube Tube
(1)
TO-263AB MBRB10H100HE3/45 1.33 45 50/tube Tube
(1)
TO-263AB MBRB10H100HE3/81 1.33 81 800/reel Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 13-Jun-12 Document Number: 88667
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000