SI1553CDL-T1-GE3 Vishay

Si1553CDL www.vishay.com Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES SC-70 (6 leads) SOT-363 Dual TrenchFET power MOSFET S 2 100 % R tested g 4 G 2 Material categorization: for definitions of 5 D 1 compliance please see 6 www.vishay.com/doc 99912 APPLICATIONS 3 D 2 Load switch 2 G 1 DC/DC converter 1 S 1 Top View D S 1 2 Marking Code: RH PRODUCT SUMMARY G 2 N-CHANNEL P-CHANNEL G 1 V (V) 20 -20 DS R max. () at V = 4.5 V 0.390 0.850 DS(on) GS R max. () at V = 2.7 V 0.510 1.350 DS(on) GS R max. () at V = 2.5 V 0.578 1.480 DS(on) GS S D 1 2 Q typ. (nC) 0.55 0.95 g N-Channel MOSFET P-Channel MOSFET a I (A) 0.7 -0.5 D Configuration N- and p-pair ORDERING INFORMATION Package SC70-6 Lead (Pb)-free and halogen-free Si1553CDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT 20 -20 Drain-source voltage V DS V Gate-source voltage V 12 GS T = 25 C 0.7 -0.5 C T = 70 C 0.6 -0.4 C Continuous drain current (T = 150 C) I J D b, c b, c T = 25 C 0.7 -0.4 A b, c b, c T = 70 C 0.5 -0.4 A A T = 25 C 0.3 -0.3 C Source-drain current diode current I S b, c b, c T = 25 C 0.2 -0.2 A Pulsed drain current (t = 300 s) I 2-1 DM T = 25 C 0.34 0.34 C = 70 C 0.22 0.22 T C Maximum power dissipation P W D b, c b, c T = 25 C 0.29 0.29 A b, c b, c T = 70 C 0.18 0.18 A Operating junction and storage temperature range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS N-CHANNEL P-CHANNEL PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX. b, d Maximum junction-to-ambient t 10 s R 365 438 365 438 thJA C/W Maximum junction-to-foot (Drain) Steady State R 308 370 308 370 thJF Notes a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 C/W (N-Channel) and 486 C/W (P-Channel). S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si1553CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNIT Static V = 0 V, I = 250 A N-Ch 20 - - GS D Drain-source breakdown voltage V V DS V = 0 V, I = -250 A P-Ch -20 - - GS D I = 250 A N-Ch - 24 - D V temperature coefficient V /T DS DS J I = -250 A P-Ch - -13 - D mV/C I = 250 A N-Ch - -1.8 - D V temperature coefficient V /T GS(th) GS(th) J I = -250 A P-Ch - 2.3 - D V = V , I = 250 A N-Ch 0.6 - 1.5 DS GS D Gate-source threshold voltage V V GS(th) V = V , I = -250 A P-Ch -0.6 - -1.5 DS GS D N-Ch - - 100 Gate-source leakage I V = 0 V, V = 12 V nA GSS DS GS P-Ch - - 100 V = 20 V, V = 0 V N-Ch - - 1 DS GS V = -20 V, V = 0 V P-Ch - - -1 DS GS Zero gate voltage drain current I A DSS V = 20 V, V = 0 V, T = 55 C N-Ch - - 10 DS GS J V = -20 V, V = 0 V, T = 55 C P-Ch - - -10 DS GS J V = 5 V, V = 5 V N-Ch 2 - - DS GS b On-state drain current I A D(on) V = -5 V, V = -5 V P-Ch -1 - - DS GS V = 4.5 V, I = 0.7 A N-Ch - 0.325 0.390 GS D V = -4.5 V, I = -0.4 A P-Ch - 0.708 0.850 GS D V = 2.7 V, I = 0.4 A N-Ch - 0.425 0.510 GS D b Drain-source on-state resistance R DS(on) V = -2.7 V, I = -0.2 A P-Ch - 1.130 1.350 GS D V = 2.5 V, I = 0.4 A N-Ch - 0.462 0.578 GS D V = -2.5V, I = -0.2 A P-Ch - 1.230 1.480 GS D V = 15 V, I = 0.7 A N-Ch - 1.5 - DS D b Forward transconductance g S fs V = -15 V, I = -0.5 A P-Ch - 0.8 - DS D a Dynamic N-Ch - 38 - Input capacitance C iss P-Ch - 43 - N-Channel V = 10 V, V = 0 V, f = 1 MHz DS GS N-Ch - 14 - Output capacitance C pF oss P-Ch - 16 - P-Channel V = -10 V, V = 0 V, f = 1 MHz N-Ch - 6 - DS GS Reverse transfer capacitance C rss P-Ch - 10 - V = 10 V, V = 10 V, I = 0.7 A N-Ch - 1.2 1.8 DS GS D V = -10 V, V = -10 V, I = -0.5 A P-Ch - 1.9 3 DS GS D Total gate charge Q g N-Ch - 0.55 1.1 P-Ch - 0.95 1.5 N-Channel nC V = 10 V, V = 4.5 V I = 0.5 A DS GS D N-Ch - 0.15 - Gate-source charge Q gs P-Ch - 0.25 - P-Channel V = -10 V, V = -4.5 V, I = -0.4 A N-Ch - 0.15 - DS GS D Gate-drain charge Q gd P-Ch - 0.25 - N-Ch 1.5 7.2 14.4 Gate resistance R f = 1 MHz g P-Ch 2.1 10.3 20.6 S20-0959-Rev. C, 21-Dec-2020 Document Number: 67693 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000