Si1865DDL www.vishay.com Vishay Siliconix Load Switch with Level-Shift FEATURES SOT-363 Low R TrenchFET DS(on) SC-70 (6 leads) S 1.8 V to 12 V input 2 4 ON/OFF 1.5 V to 8 V logic level control 5 R1, C1 Low profile, small footprint SC-70-6 package 6 2000 V ESD protection on input switch, V ON/OFF Adjustable slew-rate 3 Material categorization: for definitions of compliance D 2 2 please see www.vishay.com/doc 99912 D 2 1 APPLICATIONS R2 Top View Load switch with level-shift Marking Code: VD Slew-rate control Portable / consumer devices PRODUCT SUMMARY V (V) 12 DS DESCRIPTION R ( ) at V = 4.5 V 0.200 DS(on) IN The Si1865DDL includes a p- and n-channel MOSFET in R ( ) at V = 2.5 V 0.300 DS(on) IN a single SC-70-6 package. The low on-resistance p-channel R ( ) at V = 1.8 V 0.508 DS(on) IN TrenchFET is tailored for use as a load switch. The I (A) 1.1 D n-channel, with an external resistor, can be used as a Configuration Level-shift level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by APPLICATION CIRCUITS logic signals as low as 1.5 V. The Si1865DDL operates on supply lines from 1.8 V to 12 V, and can drive loads up to Si1865DDL 1.1 A. 2, 3 4 14 V OUT I = 1 A V L IN V = 3 V ON/OFF Q2 C = 10 F i R1 C1 C = 1 F o t r 6 6 10.5 t f 7 5 ON/OFF LOAD C o Q1 t d(o) 3.5 C i t 1 d(on) 0 R2 0 2 4 6 8 10 GND R2 R (k) 2 Switching Variation R2 at V = 2.5 V, R1 = 20 k IN COMPONENTS The Si1865DDL is ideally suited for high-side load switching a R1 Pull-up resistor Typical 10 k to 1 M in portable applications. The integrated n-channel level-shift a device saves space by reducing external components. The R2 Optional slew-rate control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored C1 Optional slew-rate control Typical 1000 pF to different load types. Note a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on S13-2618-Rev. B, 23-Dec-13 Document Number: 62888 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Time (us) Si1865DDL www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si1865DDL 4 2, 3 D2 S2 Q2 6 R1, C1 5 Q1 ON/OFF 1 R2 ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1865DDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Input voltage V (V)12 IN DS2 V On/off voltage V 8 ON/OFF a, b Continuous 1.1 Load current I L b, c Pulsed 5 A a Continuous intrinsic diode conduction I -0.3 S a Maximum power dissipation P 0.357 W D Operating junction and storage temperature range T , T -55 to 150 C J stg ESD rating, MIL-STD-883D human body model (100 pF, 1500 )ESD 2 kV THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a Maximum junction-to-ambient (continuous current) R 290 350 thJA C/W Maximum junction-to-foot (Q2) R 250 300 thJF SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Off Characteristics Reverse leakage current I V = 12 V, V = 0 V - - 1 A FL IN ON/OFF Diode forward voltage V I = -0.8 A - -0.84 -1.2 V SD S On Characteristics Input voltage range V 1.8 - 12 V IN V = 1.5 V, V = 4.5 V, I = 1.1 A - 0.165 0.200 ON/OFF IN D On-resistance (p-channel) R V = 1.5 V, V = 2.5 V, I = 0.9 A - 0.250 0.300 DS(on) ON/OFF IN D V = 1.5 V, V = 1.8 V, I = 0.2 A - 0.376 0.508 ON/OFF IN D V 0.2 V, V = 5 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF On-state (p-channel) drain-current I A D(on) V 0.3 V, V = 3 V, V = 1.5 V 1 - - IN-OUT IN ON/OFF Notes a. Surface mounted on FR4 board b. V = 12 V, V = 8 V, T = 25 C IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 % Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2618-Rev. B, 23-Dec-13 Document Number: 62888 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000