SI2304DDS-T1-GE3 Vishay

SI2304DDS-T1-GE3 electronic component of Vishay
SI2304DDS-T1-GE3 Vishay
SI2304DDS-T1-GE3 MOSFETs
SI2304DDS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2304DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2304DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2304DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2304DDS-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.1518 ea
Line Total: USD 0.76 
Availability : 20903
  
Ship by Fri. 22 Aug to Wed. 27 Aug
QtyUnit Price
5$ 0.1518
50$ 0.1204
150$ 0.1044
500$ 0.0625
3000$ 0.0497
6000$ 0.0464

Availability 232800
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1048
6000$ 0.0997
9000$ 0.0976
24000$ 0.0886


Availability 11640
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.12
6000$ 0.1134
12000$ 0.1116
15000$ 0.111
45000$ 0.1074


Availability 4328
Ship by Wed. 13 Aug to Fri. 15 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.63
10$ 0.42
50$ 0.2954
100$ 0.2548
101$ 0.189


Availability 20903
Ship by Fri. 22 Aug to Wed. 27 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1518
50$ 0.1204
150$ 0.1044
500$ 0.0625
3000$ 0.0497
6000$ 0.0464


Availability 8730
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1738


Availability 2405
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 1184
Multiples : 1
QtyUnit Price
1184$ 0.2197
1191$ 0.2184
1274$ 0.2041
2000$ 0.1872


Availability 232800
Ship by Fri. 15 Aug to Thu. 21 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1048
6000$ 0.0997
9000$ 0.0976
24000$ 0.097

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2304DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2304DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2304DDS-T1-GE3 is an N-Channel 30V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) manufactured by Vishay. This device is a logic level super-junction MOSFET (metal-oxide-semiconductor field-effect transistor) and is designed to stand up to the demanding and efficient power requirements of DC to DC converters or load switches. This device features an integrated Ultra Low ON-Resistance (RDS(ON)) of 48 mO (Ta) and 50 mO (Tc) at 4.5V, an optimized Gate charge (QG) of 13 nC, and a total Gate charge of 24 nC. It also features an easily controllable Gate threshold voltage range of 1.35V to 2.2V, providing greater flexibility and improved design capabilities. As with all SOT-23-3 packages, this device allows for both single and dual inline mobile and space constrained designs. With its high temperature rating of 175°C, this device is suitable for a broad range of industrial and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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