X-On Electronics has gained recognition as a prominent supplier of SI2304DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2304DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2304DDS-T1-GE3 Vishay

SI2304DDS-T1-GE3 electronic component of Vishay
SI2304DDS-T1-GE3 Vishay
SI2304DDS-T1-GE3 MOSFETs
SI2304DDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2304DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2304DDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1894 ea
Line Total: USD 0.95 
Availability - 8201
Ship by Tue. 20 May to Fri. 23 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
247350
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1235
6000 : USD 0.1176
9000 : USD 0.1175
24000 : USD 0.1024

11640
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1239
6000 : USD 0.1171
12000 : USD 0.1153
15000 : USD 0.1147
45000 : USD 0.1109

8201
Ship by Tue. 20 May to Fri. 23 May
MOQ : 5
Multiples : 5
5 : USD 0.1894
50 : USD 0.1518
150 : USD 0.1332
500 : USD 0.0803
3000 : USD 0.0653
6000 : USD 0.0615

4332
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.7229
10 : USD 0.4352
50 : USD 0.3037
100 : USD 0.2646
101 : USD 0.1909

2405
Ship by Tue. 13 May to Mon. 19 May
MOQ : 1695
Multiples : 1
1695 : USD 0.1584
1980 : USD 0.1356
2090 : USD 0.1285
2235 : USD 0.1201

43650
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1558

247350
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1232
6000 : USD 0.1174
9000 : USD 0.1162
24000 : USD 0.1024

8730
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1895

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI2304DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2304DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI2304DDS-T1-GE3 is an N-Channel 30V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) manufactured by Vishay. This device is a logic level super-junction MOSFET (metal-oxide-semiconductor field-effect transistor) and is designed to stand up to the demanding and efficient power requirements of DC to DC converters or load switches. This device features an integrated Ultra Low ON-Resistance (RDS(ON)) of 48 mO (Ta) and 50 mO (Tc) at 4.5V, an optimized Gate charge (QG) of 13 nC, and a total Gate charge of 24 nC. It also features an easily controllable Gate threshold voltage range of 1.35V to 2.2V, providing greater flexibility and improved design capabilities. As with all SOT-23-3 packages, this device allows for both single and dual inline mobile and space constrained designs. With its high temperature rating of 175°C, this device is suitable for a broad range of industrial and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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