SI2306BDS-T1-E3 Vishay

SI2306BDS-T1-E3 electronic component of Vishay
SI2306BDS-T1-E3 Vishay
SI2306BDS-T1-E3 MOSFETs
SI2306BDS-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2306BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2306BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2306BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 4.0A 0.75W
Datasheet: SI2306BDS-T1-E3 Datasheet (PDF)
Price (USD)
1229: USD 0.2116 ea
Line Total: USD 260.06 
Availability : 1222
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
1229$ 0.2116
1393$ 0.1867
1407$ 0.1848
1579$ 0.1647
2404$ 0.1082

Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1989
6000$ 0.1887
9000$ 0.1875
12000$ 0.1862
15000$ 0.1838


Availability 1955
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.658
10$ 0.4648
43$ 0.4382
50$ 0.434
119$ 0.4144


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2143


Availability 5092
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 768
Multiples : 1
QtyUnit Price
768$ 0.3389
827$ 0.3147


Availability 1222
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1229
Multiples : 1
QtyUnit Price
1229$ 0.2116
1393$ 0.1867
1407$ 0.1848
1579$ 0.1647
2404$ 0.1082


Availability 6106
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5106
50$ 0.3027
150$ 0.2417
500$ 0.1751
3000$ 0.1579
6000$ 0.1475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2306BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2306BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2306BDS-T1-E3 is a 30V MOSFET with 4.0A of output current rating and 0.75W of power dissipation rating, manufactured by Vishay. It is a medium voltage and low power N-Channel Enhancement Mode Field Effect Transistor. The part is designed for power management applications such as bridge rectifiers, Power-On Reset Circuits, LED lighting and switching circuits. The device has very low on-resistance and extremely low threshold voltage and therefore offers improved power efficiency in applications where space, weight or cost is limited. The SI2306BDS-T1-E3 is housed in the SOT23 package with a Pb-free lead finish.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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