X-On Electronics has gained recognition as a prominent supplier of SI2356DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2356DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2356DS-T1-GE3 Vishay

SI2356DS-T1-GE3 electronic component of Vishay
SI2356DS-T1-GE3 Vishay
SI2356DS-T1-GE3 MOSFETs
SI2356DS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2356DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3314 ea
Line Total: USD 1.66 
Availability - 1445
Ship by Fri. 16 May to Wed. 21 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2910
Ship by Fri. 09 May to Thu. 15 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1326
6000 : USD 0.125
9000 : USD 0.1241
15000 : USD 0.1226
30000 : USD 0.1194

1445
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.3314
50 : USD 0.261
150 : USD 0.1663
500 : USD 0.1338
3000 : USD 0.1202
6000 : USD 0.1127

4956
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.3962
25 : USD 0.308
100 : USD 0.2142
114 : USD 0.1638

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the SI2356DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2356DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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