SI2356DS-T1-GE3 Vishay

SI2356DS-T1-GE3 electronic component of Vishay
SI2356DS-T1-GE3 Vishay
SI2356DS-T1-GE3 MOSFETs
SI2356DS-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2356DS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2356DS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2356DS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2356DS-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.156 ea
Line Total: USD 468 
Availability : 17460
  
Ship by Thu. 25 Sep to Wed. 01 Oct
QtyUnit Price
3000$ 0.156
6000$ 0.1261
9000$ 0.1075
24000$ 0.1032

Availability 4428
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3848
50$ 0.297
150$ 0.1947
500$ 0.1436
3000$ 0.1296
6000$ 0.1211


Availability 3233
Ship by Tue. 23 Sep to Thu. 25 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.518
10$ 0.3318
25$ 0.2646
50$ 0.2254
100$ 0.196


Availability 17460
Ship by Thu. 25 Sep to Wed. 01 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.156
6000$ 0.1261
9000$ 0.1075
24000$ 0.1032

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2356DS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2356DS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

Image Part-Description
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Image Part-Description
Stock Image SI2367DS-T1-GE3
P-Channel 20 V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Stock : 0
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image SI2369DS-T1-GE3
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Stock : 2995
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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The Vishay SI2356DS-T1-GE3 is an N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) device. It is an advanced trench technology MOSFET capable of operating at very low on-states with fast switching speeds. It has low threshold voltage and low Gate charge. The device is an ultra-low RDS(ON) to minimize conduction losses. The package is small, thin andthermally enhanced, ideal for space-constrained and surface mount applications. It is AEC-Q101 qualified to assure reliability and durability over extended temperature and physical stress conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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