SI2365EDS-T1-GE3 Vishay

Si2365EDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Max. Q (Typ.) I (A) 100 % R Tested DS DS(on) g D g Built-in ESD Protection 0.0320 at V = - 4.5 V - 5.9 GS - Typical ESD Performance 3000 V 0.0410 at V = - 2.5 V - 20 - 5.2 13.8 nC GS Material categorization: 0.0675 at V = - 1.8 V - 4.3 GS For definitions of compliance please see www.vishay.com/doc 99912 TO-236 (SOT-23) APPLICATIONS Power Management for Portable and Consumer - Load Switches G 1 - DC/DC Converters 3 S D S 2 Top View G Si2365EDS (H5)* * Marking Code D Ordering Information: P-Channel MOSFET Si2365EDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.9 C T = 70 C - 4.7 C I Continuous Drain Current (T = 150 C) D J b, c T = 25 C - 4.5 A b, c T = 70 C - 3.6 A A Pulsed Drain Current (t = 300 s) I - 20 DM T = 25 C - 1.4 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1 A T = 25 C 1.7 C T = 70 C 1.1 C Maximum Power Dissipation P W D b, c T = 25 C 1 A b, c T = 70 C 0.6 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 5 s 100 130 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 60 75 thJF Notes: a. T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 C/W. Document Number: 63199 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-1505-Rev. C, 01-Jul-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2365EDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 10 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4 A 0.0265 0.0320 GS D a R V = - 2.5 V, I = - 4 A 0.0340 0.0410 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2 A 0.0465 0.0675 GS D b Dynamic V = - 10 V, V = - 8 V, I = - 4.5 A 23.8 36 DS GS D Q Total Gate Charge g 13.8 21 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 4.5 A 1.9 gs DS GS D Gate-Drain Charge Q 3 gd R Gate Resistance f = 1 MHz 2.2 11 22 g Turn-On Delay Time t 22 33 d(on) t Rise Time V = - 10 V, R = 2.8 21 32 r DD L I - 3.6 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 62 93 D GEN g d(off) t Fall Time 14 21 f ns Turn-On Delay Time t 918 d(on) t Rise Time V = - 10 V, R = 2.8 612 r DD L I - 3.6 A, V = - 8 V, R = 1 Turn-Off Delay Time t D GEN g 65 98 d(off) t Fall Time 15 23 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 1.4 S C A I Pulse Diode Forward Current - 20 SM V I = - 3.6 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 13 20 ns rr Q Body Diode Reverse Recovery Charge 510 nC rr I = - 3.6 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 63199 2 S13-1505-Rev. C, 01-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000