X-On Electronics has gained recognition as a prominent supplier of SI3447BDV-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3447BDV-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3447BDV-T1-E3 Vishay

SI3447BDV-T1-E3 electronic component of Vishay

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Part No.	SI3447BDV-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 12V 5.2A 2W 2A, 35V smart power MOSFET with a low threshold voltage.
Datasheet:	SI3447BDV-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.2549 ea
Line Total: USD 764.7

Availability - 0

MOQ: 3000 Multiples: 1
Pack Size: 1

SI3447BDV-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 09 May to Thu. 15 May MOQ : 3000 Multiples : 1	3000 : USD 0.2549

We are delighted to provide the SI3447BDV-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3447BDV-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI3447BDV-T1-E3 is a low-voltage, single N-channel MOSFET from Vishay Siliconix. This component is designed to be used in a variety of applications, including for power conversion and as switches for high-speed switching applications. It features a low on-resistance of only 0.04 Ohm, a drain-source breakdown voltage of 30V, and a continuous drain current of 3.2A. The package is a small, lead-free SO-8 type. This component is RoHS-compliant and is ideal for applications requiring minimal power consumption.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 4.5 A 4.5 A
Vds - Drain-Source Breakdown Voltage - 12 V - 12 V
Rds On - Drain-Source Resistance 40 mOhms 40 mOhms
Transistor Polarity P - Channel P - Channel
Vgs - Gate-Source Breakdown Voltage 8 V 8 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.1 W 1.1 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TSOP - 6 TSOP - 6
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Tradename Trenchfet Trenchfet
Configuration Single Single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 46 ns 46 ns
Rise Time 46 ns 46 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 62 ns 62 ns