Si3861BDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS2 DS(on) D Definition 0.075 at V = 10 V 2.3 IN 4.5 V Rated 0.120 at V = 5.0 V 4.5 to 20 1.9 IN ESD Protected: 3000 V 0.145 at V = 4.5 V 1.7 IN 105 m Low R TrenchFET DS(on) 4.5 V to 20 V Input 1.5 V to 8 V Logic Level Control Low Profile, Small Footprint TSOP-6 Package 3000 V ESD Protection On Input Switch, V ON/OFF Adjustable Slew-Rate Compliant to RoHS Directive 2002/95/EC DESCRIPTION The Si3861BDV includes a P- and N-Channel MOSFET in a shift to drive the P-Channel load-switch. The N-Channel single TSOP-6 package. The low on-resistance P-Channel MOSFET has internal ESD protection and can be driven by TrenchFET is tailored for use as a load switch. The logic signals as low as 1.5 V. The Si3861DV operates on N-Channel, with an external resistor, can be used as a level- supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A. APPLICATION CIRCUITS Si3861BDV 10 t f 2, 3 8 4 V OUT V IN t d(off) Q2 R1 C1 6 6 6 t r 4 5 ON/OFF I = 1 A C LOAD L o 2 V = 3 V Q1 ON/OFF C = 10 F i t C = 1 F d(on) o 0 C i 1 0 246 8 10 12 R2 (k) R2 Note: For R2 switching variations with other V /R1 IN GND R2 combinations See Typical Characteristics The Si3861BDV is ideally suited for high-side load switching COMPONENTS in portable applications. The integrated N-Channel level-shift R1 Pull-Up Resistor Typical 10 k to 1 m* device saves space by reducing external components. The R2 Optional Slew-Rate Control Typical 0 to 100 k* slew rate is set externally so that rise-times can be tailored to different load types. C1 Optional Slew-Rate Control Typical 1000 pF Note: * Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 73343 www.vishay.com S09-2110-Rev. B, 12-Oct-09 1 Time (S)New Product Si3861BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3861BDV TSOP-6 4 Top View 2, 3 D2 S2 Q2 R2 R1, C1 1 6 6 R1, C1 D2 ON/OFF 2 5 5 Q1 D2 S2 3 4 ON/OFF 1 Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free) Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) R2 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Input Voltage 20 IN V V ON/OFF Voltage 8 ON/OFF a, b 2.3 Continuous I Load Current L b, c 4 A Pulsed a I - 1 Continuous Intrinsic Diode Conduction S a P 0.83 W Maximum Power Dissipation D T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 3 kV THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a R 120 150 Maximum Junction-to-Ambient (Continuous Current) thJA C/W Maximum Junction-to-Foot (Q2) R 60 80 thJF SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit OFF Characteristics Reverse Leakage Current I V = 30 V, V = 0 V 1 A FL IN ON/OFF V I = - 1 A Diode Forward Voltage - 0.8 - 1 V SD S ON Characteristics Input Voltage Range V 4.5 20 V IN V = 10 V 0.060 0.075 IN On-Resistance (P-Channel) at 1 A R V = 1.5 V, I = 1 A V = 5.0 V 0.096 0.120 DS(on) ON/OFF D IN V = 4.5 V 0.115 0.145 IN V 0.2 V, V = 10 V, V = 1.5 V 1 IN-OUT IN ON/OFF I On-State (P-Channel) Drain-Current A D(on) V 0.3 V, V = 5 V, V = 1.5 V 1 IN-OUT IN ON/OFF Notes: a. Surface Mounted on FR4 board. b. V = 12 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test: pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73343 2 S09-2110-Rev. B, 12-Oct-09