Si4048DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.0085 at V = 10 V TrenchFET Power MOSFET 19.3 GS 30 15 nC 100 % R Tested g 0.0105 at V = 4.5 V 17.3 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook DC/DC SO-8 - High Side D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: Si4048DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 19.3 C T = 70 C 15.3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 12.7 A A b, c T = 70 C 10.2 A Pulsed Drain Current (300 s) I 70 DM Avalanche Current I 20 AS L = 0.1 mH Avalanche Energy E mJ 20 AS T = 25 C 5.1 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 2.2 A T = 25 C 5.7 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.5 A b, c T = 70 C 1.6 A T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 39 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 18 22 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 C/W. Document Number: 66816 www.vishay.com S10-2009-Rev. A, 06-Sep-10 1Si4048DY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 33 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 6.3 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 30 A D(on) DS GS V = 10 V, I = 15 A 0.0070 0.0085 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0085 0.0105 GS D a g V = 15 V, I = 15 A Forward Transconductance 78 S fs DS D b Dynamic Input Capacitance C 2060 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 335 pF oss DS GS Reverse Transfer Capacitance C 132 rss V = 15 V, V = 10 V, I = 10 A 34 51 DS GS D Q Total Gate Charge g 15 23 nC Gate-Source Charge Q 6.5 V = 15 V, V = 4.5 V, I = 10 A gs DS GS D Q Gate-Drain Charge 4.0 gd Gate Resistance R f = 1 MHz 0.15 0.65 1.3 g t Turn-On Delay Time 19 35 d(on) t Rise Time V = 15 V, R = 15 11 22 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 18 35 d(off) t Fall Time 816 f ns t Turn-On Delay Time 10 20 d(on) t Rise Time V = 15 V, R = 15 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 21 40 d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 5.1 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.76 1.1 V SD S GS t Body Diode Reverse Recovery Time 23 45 ns rr Body Diode Reverse Recovery Charge Q 13 25 nC rr I = 5.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66816 2 S10-2009-Rev. A, 06-Sep-10