New Product Si4126DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.00275 at V = 10 V 39 GS 100 % R and UIS Tested COMPLIANT g 30 30 nC 0.0034 at V = 4.5 V 35 GS APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information: Si4126DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 39 C T = 70 C 31 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 26.5 b, c T = 70 C A 21 A I Pulsed Drain Current 70 DM T = 25 C 7.0 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 3.1 I Single Pulse Avalanche Current 40 AS L = 0.1 mH Avalanche Energy E mJ 80 AS T = 25 C 7.8 C T = 70 C 5.0 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 29 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 13 16 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 69994 www.vishay.com S-80895-Rev. B, 21-Apr-08 1New Product Si4126DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 24 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V = V , I = 250 A Gate-Source Threshold Voltage V 1.0 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0022 0.00275 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0027 0.0034 GS D a g V = 15 V, I = 15 A 75 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 4405 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 760 pF oss DS GS Reverse Transfer Capacitance C 285 rss V = 15 V, V = 10 V, I = 20 A 70 105 DS GS D Q Total Gate Charge g 30 45 nC Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 20 A 10.2 gs DS GS D Q Gate-Drain Charge 7.4 gd Gate Resistance R f = 1 MHz 0.3 1.4 2.8 g t Turn-On Delay Time 36 60 d(on) Rise Time t 20 40 r V = 15 V, R = 1.5 DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 90 d(off) t Fall Time 24 40 f ns t Turn-On Delay Time 15 30 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 43 70 d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 7.0 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.71 1.1 V SD S t Body Diode Reverse Recovery Time 38 60 ns rr Q Body Diode Reverse Recovery Charge 38 60 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 19 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69994 2 S-80895-Rev. B, 21-Apr-08