X-On Electronics has gained recognition as a prominent supplier of SI4178DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4178DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI4178DY-T1-GE3 Vishay

SI4178DY-T1-GE3 electronic component of Vishay
SI4178DY-T1-GE3 Vishay
SI4178DY-T1-GE3 MOSFETs
SI4178DY-T1-GE3 Semiconductors

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See Product Specifications
Part No. SI4178DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 25V Vgs SO-8
Datasheet: SI4178DY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.384 ea
Line Total: USD 1.92 
Availability - 8681
Ship by Fri. 16 May to Wed. 21 May
MOQ: 5  Multiples: 5
Pack Size: 5

 SI4178DY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
1624
Ship by Fri. 09 May to Thu. 15 May
MOQ : 683
Multiples : 1
683 : USD 0.3805
756 : USD 0.3437
764 : USD 0.3402
782 : USD 0.3323
817 : USD 0.3182
867 : USD 0.2999
1104 : USD 0.2355

8681
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.384
50 : USD 0.3004
150 : USD 0.1984
500 : USD 0.1484
2500 : USD 0.1349
5000 : USD 0.1269

2385
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.7
50 : USD 0.5726
52 : USD 0.3612
142 : USD 0.3416
2500 : USD 0.3318

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4178DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4178DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4178DY-T1-GE3 is a Dual N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) manufactured by Vishay. It has an operating voltage of 30V and a gate threshold voltage of 25V with a package size of SO-8. It is rated for a maximum power dissipation of 2.46W (TA=25°C). The SI4178DY-T1-GE3 has an RDS(on) figure of 0.044O (VGS=10V and ID=7A) and a gate-source capacitance of 12.5nF (f=1MHz). It is designed for use in a variety of applications such as motor drives, switching and DC/DC converters, PWM motor controls, etc.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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