SI4178DY-T1-GE3 Vishay

SI4178DY-T1-GE3 electronic component of Vishay
SI4178DY-T1-GE3 Vishay
SI4178DY-T1-GE3 MOSFETs
SI4178DY-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI4178DY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4178DY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI4178DY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 25V Vgs SO-8
Datasheet: SI4178DY-T1-GE3 Datasheet (PDF)
Price (USD)
5: USD 0.3712 ea
Line Total: USD 1.86 
Availability : 8749
  
Ship by Mon. 18 Aug to Thu. 21 Aug
QtyUnit Price
5$ 0.3712
50$ 0.2878
150$ 0.189
500$ 0.14
2500$ 0.1266
5000$ 0.1187

Availability 1324
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 733
Multiples : 1
QtyUnit Price
733$ 0.355
788$ 0.3301
796$ 0.3267
831$ 0.3132
855$ 0.3044
920$ 0.2826
1105$ 0.2354


Availability 2375
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.616
20$ 0.5306
50$ 0.4914
52$ 0.3626
142$ 0.343


Availability 2425
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2115
5000$ 0.2092
7500$ 0.2073
12500$ 0.205
17500$ 0.203


Availability 1324
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 796
Multiples : 1
QtyUnit Price
796$ 0.3267
831$ 0.3132
855$ 0.3044
920$ 0.2826
1105$ 0.2354


Availability 8749
Ship by Mon. 18 Aug to Thu. 21 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.3712
50$ 0.2878
150$ 0.189
500$ 0.14
2500$ 0.1266
5000$ 0.1187

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI4178DY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4178DY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI4178DY-T1-GE3 is a Dual N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) manufactured by Vishay. It has an operating voltage of 30V and a gate threshold voltage of 25V with a package size of SO-8. It is rated for a maximum power dissipation of 2.46W (TA=25°C). The SI4178DY-T1-GE3 has an RDS(on) figure of 0.044O (VGS=10V and ID=7A) and a gate-source capacitance of 12.5nF (f=1MHz). It is designed for use in a variety of applications such as motor drives, switching and DC/DC converters, PWM motor controls, etc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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