New Product SiR892DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET a, g 0.0032 at V = 10 V GS 50 100 % R Tested g 25 20 nC a, g 0.0042 at V = 4.5 V GS 50 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous Buck dc-to-dc Converters S 6.15 mm 5.15 mm - Game Machine 1 S D 2 S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: SiR892DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 25 DS V Gate-Source Voltage V 20 GS a, g T = 25 C C 50 g T = 70 C C 50 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 30 b, c T = 70 C A 24 A I Pulsed Drain Current 70 DM g T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 Single Pulse Avalanche Current I 40 AS L = 0.1 mH E Single Pulse Avalanche Energy 80 mJ AS T = 25 C 50 C T = 70 C 32 C P Maximum Power Dissipation W D b, c T = 25 C 5.0 A b, c T = 70 C A 3.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 20 25 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.0 2.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. g. Package limited. Document Number: 68639 www.vishay.com S-83048-Rev. B, 22-Dec-08 1New Product SiR892DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 25 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.0 2.6 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 25 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 25 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0025 0.0032 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0034 0.0042 GS D a g V = 10 V, I = 10 A 50 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2645 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 745 pF oss DS GS C Reverse Transfer Capacitance 265 rss V = 10 V, V = 10 V, I = 10 A 40 60 DS GS D Q Total Gate Charge g 20 30 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 10 A 6.3 gs DS GS D Q Gate-Drain Charge 5.2 gd R Gate Resistance f = 1 MHz 0.15 0.7 1.4 g t Turn-On Delay Time 13 25 d(on) t Rise Time V = 10 V, R = 1 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 28 50 d(off) Fall Time t 918 f ns t Turn-On Delay Time 30 55 d(on) Rise Time t 18 35 V = 10 V, R = 1 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 80 d(off) Fall Time t 25 50 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.73 1.1 V SD S t Body Diode Reverse Recovery Time 27 50 ns rr Body Diode Reverse Recovery Charge Q 17 32 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns Reverse Recovery Rise Time t 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68639 2 S-83048-Rev. B, 22-Dec-08