Si4409DY Vishay Siliconix P-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 1.2 at V = - 10 V - 1.3 TrenchFET Power MOSFET GS - 150 4.8 nC 100 % UIS Tested 1.3 at V = - 6 V - 1.2 GS APPLICATIONS Active Clamp Switch Isolated DC/DC Converters S SO-8 S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: P-Channel MOSFET Si4409DY-T1-E3 (Lead (Pb)-free) Si4409DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 150 DS V V Gate-Source Voltage 20 GS T = 25 C - 1.3 C T = 70 C - 1.0 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 0.9 A b, c T = 70 C - 0.7 A A I - 2 Pulsed Drain Current DM - 1.3 T = 25 C C I Continuous Source-Drain Diode Current S b, c T = 25 C - 0.9 A Avalanche Current I 4 AS L = 0.1 mH mJ Single-Pulse Avalanche Energy E 0.8 AS T = 25 C 4.6 C T = 70 C 2.9 C P Maximum Power Dissipation W D b, c T = 25 C 2.2 A b, c T = 70 C 1.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d t 5 s R 47 55 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot Steady State R 22 27 thJF Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 95 C/W. Document Number: 70485 www.vishay.com S09-322-Rev. B, 02-Mar-09 1Si4409DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 150 V DS GS D V Temperature Coefficient V /T - 160 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 150 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 150 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 10 V, V = - 10 V - 2 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 0.5 A 0.95 1.2 GS D a R Drain-Source On-State Resistance DS(on) V = - 6 V, I = - 0.5 A 1.0 1.3 GS D a g V = - 10 V, I = - 0.5 A 2.2 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 332 iss C V = - 50 V, V = 0 V, f = 1 MHz Output Capacitance 25 pF oss DS GS C Reverse Transfer Capacitance 13 rss V = - 75 V, V = - 10 V, I = - 0.5 A 7.7 12 DS GS D Q Total Gate Charge g 4.8 7.5 nC Q V = - 75 V, V = - 6 V, I = - 0.5 A Gate-Source Charge 1.5 gs DS GS D Q Gate-Drain Charge 2.5 gd R Gate Resistance f = 1 MHz 9 g t Turn-On Delay Time 714 d(on) t V = - 75 V, R = 75 Rise Time 10 20 r DD L t I - 1 A, V = - 10 V, R = 6 Turn-Off DelayTime 16 30 d(off) D GEN g t Fall Time 918 f ns t Turn-On Delay Time 714 d(on) t V = - 75 V, R = 75 Rise Time 10 20 r DD L t I - 1 A, V = - 6 V, R = 1 Turn-Off DelayTime 13 25 d(off) D GEN g t Fall Time 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current - 1.3 S C A I Pulse Diode Forward Current - 2.0 SM V I = - 1 A, V = 0 V Body Diode Voltage - 0.7 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 43 70 ns rr Q Body Diode Reverse Recovery Charge 95 150 nC rr I = - 1.2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 40 a ns t Reverse Recovery Rise Time 3 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70485 2 S09-322-Rev. B, 02-Mar-09