SI4403BDY-T1-E3 Vishay

SI4403BDY-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI4403BDY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4403BDY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI4403BDY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 20V 9A 2.5W High performance low-capacitance ESD protection diode in a SOT-23 package.
Datasheet:	SI4403BDY-T1-E3 Datasheet (PDF)

Price (USD)

2500: USD 0.392 ea
Line Total: USD 980

Availability : 0

Qty	Unit Price
2500	$ 0.392

SI4403BDY-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 2500
Multiples : 1

Qty	Unit Price
2500	$ 0.392

Availability 0

Ship by Fri. 08 Aug to Thu. 14 Aug

MOQ : 19
Multiples : 1

Qty	Unit Price
19	$ 1.0556

We are delighted to provide the SI4403BDY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4403BDY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4403BDY-T1-E3 is an RF power field effect transistor, designed for applications that require high efficiency, low current leakage and high gain in the frequency range of 1.6 to 2.6 GHz. It features enhanced PSAT, low thermal resistance and a low drain-to-source voltage. This transistor can be operated in a wide range of temperature ranges, making it suitable for many applications including wireless communication systems. It is also RoHS and REACH compliant, making it an ideal choice for environmentally conscious applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 7.3 A 7.3 A
Vds - Drain-Source Breakdown Voltage - 20 V - 20 V
Rds On - Drain-Source Resistance 17 mOhms 17 mOhms
Transistor Polarity p - channel p - channel
Vgs - Gate-Source Breakdown Voltage 8 V 8 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.35 W 1.35 W
Mounting Style smd/smt smd/smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Channel Mode enhancement enhancement
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 45 ns 45 ns
Rise Time 45 ns 45 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 150 ns 150 ns