Product Information

SI4848DY-T1-GE3

SI4848DY-T1-GE3 electronic component of Vishay

Datasheet
MOSFET 150V 3.7A 3.0W 85mohm @ 10V
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8445 ea
Line Total: USD 0.84

63 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2473 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.7795
10 : USD 0.6485
30 : USD 0.5821
100 : USD 0.5176
500 : USD 0.4794
1000 : USD 0.4593

3815 - Warehouse 2


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1
1 : USD 1.518
10 : USD 1.2535
100 : USD 1.0086
500 : USD 0.8797
1000 : USD 0.7372
2500 : USD 0.7026
5000 : USD 0.7026
10000 : USD 0.6762
25000 : USD 0.675

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

The SI4848DY-T1-GE3 is a power MOSFET produced by Vishay that operates with a drain-source voltage (VDS) of up to 150V and has a current rating of 3.7A and a power dissipation of 3.0 Watts. It has an average on-state resistance (RDS(on)) of 85mohm @ 10V. This part is based on the trench MOSFET technology which is used to decrease RDSon, reduce the capacitance of the device, reduce the cost and improve power efficiency. It features a low gate charge and low input capacitance which makes it suitable for fast switching applications such as server, automotive and power supply applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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