Si4833BDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) Definition DS DS(on) g D LITTLE FOOT Plus Power MOSFET 0.068 at V = - 10 V - 4.6 GS - 30 4.6 100 % R Tested g 0.110 at V = - 4.5 V - 3.4 GS Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY APPLICATIONS V (V) F Battery Management in Notebook PC a V (V) Diode Forward Voltage I (A) KA D Non-synchronous Buck Converter in HDD 30 0.44 V at 1 A 2 S K SO-8 AK 1 8 G A K 2 7 SD 3 6 G D 4 5 Top View D A Ordering Information: Si4833BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) - 30 DS V Reverse Voltage (Schottky) - 30 V KA V Gate-Source Voltage (MOSFET) 20 GS T = 25 C - 4.6 C T = 70 C - 3.6 C I Continuous Drain Current (T = 150 C) (MOSFET) D J b, c T = 25 C A - 3.8 b, c T = 70 C A - 3 I Pulsed Drain Current (MOSFET) (t = 300 s) - 20 A DM T = 25 C - 2 C I Continuous Source Current (MOSFET Diode Conduction) S b, c T = 25 C A - 1.4 b I Average Forward Current (Schottky) F - 1.4 I Pulsed Forward Current (Schottky) - 2 FM T = 25 C 2.75 C T = 70 C 1.75 C P W Maximum Power Dissipation (MOSFET and Schottky) D b, c T = 25 C A 1.75 b, c T = 70 C A 1.10 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, c, d R 60 71.5 Maximum Junction-to-Ambient (MOSFET and Schottky) thJA C/W Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) R 35 45 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on FR4 board. c. t 10 s. d. Maximum under steady state conditions is 120 C/W. Document Number: 67537 www.vishay.com S11-1649-Rev. B, 15-Aug-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4833BDY Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS DS D V Temperature Coefficient V - 20 DS DS/TJ I = - 250 A mV/C D V Temperature Coefficient V 3.9 GS(th) GS(th)/TJ V V = V , I = - 250 A Gate Threshold Voltage - 1 - 1.8 - 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 75 C - 10 DS GS J a I V - 5 V, V = - 10 V - 5 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3.6 A 0.055 0.068 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 2.8 A 0.092 0.110 GS D a g V = - 15 V, I = - 3.6 A 6.5 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 350 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 75 pF oss DS GS C Reverse Transfer Capacitance 63 rss V = - 15 V, V = - 10 V, I = - 5 A 914 DS GS D Q Total Gate Charge g 4.6 7 nC Q V = - 15 V, V = - 4.5 V, I = - 5 A 1.3 Gate-Source Charge gs DS GS D Q Gate-Drain Charge 2.1 gd R f = 1 MHz 1.5 7.3 14.5 Gate Resistance g t Turn-On Delay Time 28 50 d(on) t 73 140 Rise Time V = - 15 V, R = 3 r DD L I - 5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 12 24 d(off) t 816 Fall Time f ns t Turn-On Delay Time 612 d(on) Rise Time t V = - 15 V, R = 3 918 r DD L I - 5 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 12 24 d(off) t Fall Time 612 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current - 4.6 S C A a I - 20 SM Pulse Diode Forward Current V I = - 2 A, V = 0 V - 0.83 - 1.2 V Body Diode Voltage SD S GS t Body Diode Reverse Recovery Time 12 24 ns rr Q Body Diode Reverse Recovery Charge 612 nC rr I = - 2 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 8 a ns t Reverse Recovery Rise Time 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com Document Number: 67537 2 S11-1649-Rev. B, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000