Si4922BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.016 at V = 10 V 8 TrenchFET Power MOSFET GS 100 % R and UIS tested 30 0.018 at V = 4.5 V 8 19 g GS Compliant to RoHS Directive 2002/95/EC 0.024 at V = 2.5 V 8 GS D D 1 2 SO-8 S D 1 1 8 1 G D 1 2 7 1 S D 2 3 6 2 G G 1 2 G D 2 4 5 2 Top View S S 1 2 Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 12 GS e T = 25 C 8 C e T = 70 C 8 C Continuous Drain Current (T = 150 C) I J D b, c, e T = 25 C 8 A b, c T = 70 C 6.6 A I 35 A Pulsed Drain Current (10 s Pulse Width) DM T = 25 C 2.5 C I Source-Drain Current Diode Current S b, c T = 25 C 1.7 A I Pulsed Sorce-Drain Current 35 SM I 15 Single Pulse Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.2 mJ AS T = 25 C 3.1 C T = 70 C 2 C Maximum Power Dissipation P W D b, c T = 25 C 2 A b, c T = 70 C 1.28 A T , T Operating Junction and Storage Temperature Range - 50 to 150 C J stg THERMAL RESISTANCE RATINGS Limit Parameter Symbol Typical Maximum Unit b, d t 10 s R 50 62.5 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 C/W. e. Package Limited. Document Number: 74459 www.vishay.com S09-0704-Rev. B, 27-Apr-09 1Si4922BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 35 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.6 GS(th) GS(th) J Gate Threshold Voltage V V = V , I = 250 A 0.6 1.8 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J b I V = 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.0135 0.016 GS D b R V = 4.5 V, I = 5 A 0.0145 0.018 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 5 A 0.018 0.024 GS D b g V = 15 V, I = 5 A 30 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 2070 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 255 pF oss DS GS C Reverse Transfer Capacitance 135 rss V = 15 V, V = 10 V, I = 5 A 41 62 DS GS D Q Total Gate Charge g 19 29 nC Q V = 15 V, V = 4.5 V, I = 5 A Gate-Source Charge 3.5 gs DS GS D Q Gate-Drain Charge 3.7 gd R Gate Resistance f = 1 MHz 1.8 3 g t Turn-On Delay Time 714 d(on) t V = 15 V, R = 3 Rise Time 27 41 r DD L t I 5 A, V = 10 V, R = 1 Turn-Off Delay Time 31 47 d(off) D GEN g t Fall Time 815 f ns t Turn-On Delay Time 13 25 d(on) t V = 15 V, R = 3 Rise Time 53 80 r DD L t I 5 A, V = 4.5 V, R = 1 Turn-Off Delay Time 68 102 d(off) D GEN g t Fall Time 54 81 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 2.5 S C A a I 35 Pulse Diode Forward Current SM V I = 1.7 A Body Diode Voltage 0.77 1.2 V SD S t Body Diode Reverse Recovery Time 32 48 ns rr Q Body Diode Reverse Recovery Charge 21 32 nC rr I = 1.7 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 19 b Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74459 2 S09-0704-Rev. B, 27-Apr-09