Product Information

SI5903DC-T1-E3

SI5903DC-T1-E3 electronic component of Vishay

Datasheet
MOSFET 20V 2.9A 2.1W
2.1 A 650 V, 40 VF MOSFET with very low gate charge.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.5553 ea
Line Total: USD 1665.9

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 1
3000 : USD 0.5553

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

The SI5903DC-T1-E3 is a dual wafer ultra-low capacitance ESD protection device from Vishay. This device has a maximum of 200 volts of ESD protection, and provides a clamping voltage of 5.6 volts. It also features a low capacitance of just 0.185 pF, fast response time, and a temperature range of -55°C to +125°C. This device is RoHS compliant, lead-free, and Halogen-free. It is ideal for a variety of applications including cellular handsets, portable electronics, USB and VGA ports, and computer network cards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Vishay Huntington Electric Inc.
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VSC
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