Si5855CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g Definition D 0.144 at V = - 4.5 V LITTLE FOOT Plus Power MOSFET - 3.7 GS Ultra Low V Schottky 0.180 at V = - 2.5 V F - 20 - 3.3 4.1 nC GS Compliant to RoHS Directive 2002/95/EC 0.222 at V = - 1.8 V - 3.0 GS APPLICATIONS SCHOTTKY PRODUCT SUMMARY Charging Switch for Portable Devices V (V) - With Integrated Low V Trench Schottky Diode f F a V (V) I (A) KA Diode Forward Voltage F 20 0.375 at 1 A 1 1206-8 ChipFET S K 1 A K A G K S Marking Code D G JG XXX Lot Traceability D and Date Code D A Part Code Bottom View P-Channel MOSFET Ordering Information: Si5855CDC-T1-E3 (Lead (Pb)-free) Si5855CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage (MOSFET) V - 20 DS Reverse Voltage (Schottky) V 20 V KA Gate-Source Voltage (MOSFET) V 8 GS a T = 25 C - 3.7 C T = 70 C - 3.0 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C - 2.5 A b, c T = 70 C - 2.0 A A Pulsed Drain Current (MOSFET) I - 10 DM a T = 25 C C - 2.3 Continuous Source Current (MOSFET Diode Conduction) I S b, c T = 25 C - 1.1 A Average Forward Current (Schottky) I 1 F Pulsed Forward Current (Schottky) I 7 FM T = 25 C 2.8 C T = 70 C 1.8 C Maximum Power Dissipation (MOSFET) W b, c T = 25 C 1.3 A b, c T = 70 C 0.8 A P D T = 25 C 3.1 C T = 70 C 2.0 C Maximum Power Dissipation (Schottky) W T = 25 C 1.9 A T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendation (Peak Temperature) Document Number: 68910 www.vishay.com S10-0548-Rev. B, 08-Mar-10 1Si5855CDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, c, f R 82 99 Maximum Junction-to-Ambient (MOSFET) thJA Maximum Junction-to-Foot (Drain) (MOSFET) R 35 45 thJF C/W b, c, g R 54 65 Maximum Junction-to-Ambient (Schottky) thJA R Maximum Junction-to-Foot (Drain) (Schottky) 30 40 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on FR4 board. c. t 5 s. d. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for MOSFETs is 130 C/W. g. Maximum under steady state conditions for Schottky is 115 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V - 19 DS DS/TJ I = - 250 A mV/C D V Temperature Coefficient V 2 GS(th) GS(th)/TJ Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.45 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 ns GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 2.5 A 0.120 0.144 GS D a R V = - 2.5 V, I = - 2.2 A 0.150 0.180 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 2.0 A 0.185 0.222 GS D a g V = - 10 V, I = - 2.5 A 18 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 276 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 60 pF oss DS GS C Reverse Transfer Capacitance 43 rss V = - 10 V, V = - 5 V, I = - 2.5 A 4.5 6.8 DS GS D Total Gate Charge Q g 4.1 6.2 nC Q Gate-Source Charge V = - 10 V, V = - 4.5 V, I = - 2.5 A 0.6 gs DS GS D Gate-Drain Charge Q 1.0 gd R Gate Resistance f = 1 MHz 1.1 5.5 11 g Turn-On Delay Time t 11 17 d(on) t Rise Time V = - 10 V, R = 5 34 51 r DD L I - 2 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 22 33 d(off) D GEN g t Fall Time 816 f ns t Turn-On Delay Time 510 d(on) t Rise Time V = - 10 V, R = 5 14 21 r DD L I - 2 A, V = - 5 V, R = 1 t Turn-Off Delay Time D GEN g 17 26 d(off) t Fall Time 816 f www.vishay.com Document Number: 68910 2 S10-0548-Rev. B, 08-Mar-10