Si7464DP Vishay Siliconix N-Channel 200-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.24 at V = 10 V 2.8 GS TrenchFET Power MOSFETs 200 0.26 at V = 6 V 2.7 New Low Thermal Resistance PowerPAK GS Package with Low 1.07 mm Profile PWM Optimized For Fast Switching PowerP AK SO-8 APPLICATIONS Primary Side Switch S 6.15 mm 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 G D 5 Bottom V i e w S Ordering Information: Si7464DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 200 DS V V Gate-Source Voltage 20 GS T = 25 C 2.8 1.8 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.2 1.5 A I Continuous Source Current 3.5 1.5 A S Pulsed Drain Current I 8 DM b I 3 Avalanche Current AS b E 0.45 mJ AS Single Avalanche Energy T = 25 C 4.2 1.8 A a P W Maximum Power Dissipation D T = 70 C 2.6 1.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 25 30 a R Maximum Junction-to-Ambient thJA Steady State 60 70 C/W Maximum Junction-to-Case (Drain) Steady State R 2.9 3.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Guaranteed by design, not subject to production testing. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72052 www.vishay.com S09-0227-Rev. C, 09-Feb-09 1Si7464DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 200 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 200 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 8A On-State Drain Current D(on) DS GS V = 10 V, I = 2.8 A 0.195 0.24 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 2.7 A 0.210 0.26 GS D a g V = 15 V, I = 2.8 A 8S Forward Transconductance fs DS D a V I = 3.5 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12 18 g Q V = 100 V, V = 10 V, I = 2.8 A Gate-Source Charge 2.5 nC gs DS GS D Gate-Drain Charge Q 3.8 gd R Gate Resistance 2.5 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 100 V, R = 100 12 20 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 15 25 D GEN g d(off) ns t Fall Time 15 25 f Source-Drain Reverse Recovery t I = 3.5 A, dI/dt = 100 A/s 60 90 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 8 8 V = 10 V thru 5 V GS 6 6 4 4 T = 150 C C 2 2 4 V 25 C - 55 C 3 V 0 0 02 46 8 012345 6 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72052 2 S09-0227-Rev. C, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D